Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Wayne Mack Struble"'
Autor:
John Byrnes, Win Ye, G. Cueva, Wayne Mack Struble, Jonny Hoglund, Timothy E. Boles, Robert J. Hillard
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The characterization of High Electron Mobility Transistor (HEMT) structures is important for predicting device behavior, monitoring and developing processes and improving performance. This also includes measuring the quality of the top dielectric cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae2b436c0ef08b7f4d68abe88758d556
https://doi.org/10.1109/iciprm.2019.8819245
https://doi.org/10.1109/iciprm.2019.8819245
Autor:
Wayne Mack Struble
Publikováno v:
52nd ARFTG Conference Digest.
A new method of measuring and extracting bias dependent noise parameters for GaAs MESFETs and PHEMTs is presented. This technique only requires noise figure and S-parameter measurements over fiequency. This eliminates the need for time-consuming trad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfa92b9dc828a02b95cd60abbd2fdbd4
https://doi.org/10.1109/arftg.1998.327317
https://doi.org/10.1109/arftg.1998.327317