Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Wayne K. Ford"'
Autor:
Arun Majumdar, Simon R. Phillpot, David G. Cahill, Kenneth E. Goodson, Gerald D. Mahan, Humphrey J. Maris, Wayne K. Ford, Roberto Merlin
Publikováno v:
Journal of Applied Physics. 93:793-818
Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured m
Autor:
George Andrew Antonelli, Larry Wong, Ebrahim Andideh, Humphrey J. Maris, Wayne K. Ford, B. C. Daly
Publikováno v:
Journal of Applied Physics. 92:6005-6009
We report on measurements of the thermal conductivity of a number of amorphous materials, including fluorinated silicate glass and carbon-doped oxides. These materials are of interest to the microelectronics industry for use as insulators in micropro
Publikováno v:
Microelectronic Engineering. 35:37-40
Surface transport models proceeding via surface re-emission and surface diffusion are briefly described. The important dimensionless parameter for re-emission is the sticking probability, whereas for surface diffusion, profile evolution is governed b
Autor:
Christopher J. Morath, Robert J. Stoner, G. Andrew Antonelli, Humphrey J. Maris, Guray Tas, Wayne K. Ford
Publikováno v:
AIP Conference Proceedings.
Picosecond ultrasonics has become a widely used metrology tool in the semiconductor device industry. It provides an accurate method for the measurement of the thickness of thin films, can determine the quality of the bonding between a film and a subs
Autor:
Wayne K. Ford
Publikováno v:
Surface Science Letters. 292:A614
A first implementation of a dynamical low-energy electron diffraction theory on a parallel supercomputer is described. The computational performance of the Duke-Laramore-Beeby LEED formulation is demonstrated using an Intel iPSC TM /860 parallel comp