Influence of different annealing ambient on terbium oxide passivation layers sputtered using the RF sputtering on silicon substrate

Autor: Abubakar A Sifawa, Sabah M Mohammad, A Muhammad, Shireen Mohammed Abed, Way Foong Lim

Publikováno v: Nano Express, Vol 5, Iss 2, p 025023 (2024)

This study investigates the influence of different annealing ambient on terbium oxide (Tb _4 O _7 ) passivation layers sputtered using radio frequency (RF) sputtering on silicon (Si) substrates. The passivation layers were subjected to annealing in v

Externí odkaz: https://doaj.org/article/08316fcfc9524165b6c317666a8db518

Effects of ultraviolet-assisted electrochemical etching current densities on structural and optical characteristics of porous quaternary AlInGaN alloys

Autor: Hock Jin Quah, Way Foong Lim, Zainuriah Hassan, Rosfariza Radzali, Norzaini Zainal, Fong Kwong Yam

Publikováno v: Arabian Journal of Chemistry, Vol 12, Iss 8, Pp 3417-3430 (2019)

Effects of ultraviolet-assisted photo-electrochemical (PEC) etching current densities (J = 20, 40, 80, and 160 mA/cm2) towards structural, physical, and optical properties of aluminium indium gallium nitride (AlInGaN) semiconductors as well as corres

Externí odkaz: https://doaj.org/article/baad4393f3a842989df92386dbb0fd0c

Investigation of incorporating CeO2 seed layer for overgrowth of Green synthesized CeO2 nanostructures deposited on Si (111) substrate

Autor: Saad Milad, Ali Nsar, Zainuriah Hassan, Kuan Yew Cheong, Way Foong Lim, WF Lim

Publikováno v: Journal of Materials Science: Materials in Electronics. 34

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f00ac494ebdc918c2df5e8de7a7a05a
https://doi.org/10.1007/s10854-023-10172-9

List of contributors

Autor: Juan Andrés, Noé Arjona, K. Asokan, Irfan Ayoub, Susanta Bera, S. Chattopadhyay, Rajneesh Chaurasiya, Fan Chen, Rafael Aparecido Ciola Amoresi, Ubirajara Coleto Junior, Gustavo Martini Dalpian, P.K. Das, Wenjing Du, Somrita Dutta, Brahim El Filali, Vincenzo Esposito, M.A. Frechero, Keval Gadani, Muthu Kumaran Gnanamani, Minerva Guerra-Balcázar, Amin Hamed Mashhadzadeh, D. Jana, Yanyan Jiang, D. Paul Joseph, A.D. Joshi, Ahsanul Kabir, Vinayak Kamble, Hasmat Khan, Vladimir Kolkovsky, M. Kovendhan, Vijay Kumar, Rajan Kumar Singh, Mohan Lal Meena, Hui Li, Way Foong Lim, Shawn D. Lin, Wei Liu, Jiurong Liu, Elson Longo, Chung-Hsin Lu, Yingjie Ma, P. Mallick, Antonio Claudio Michejevs Padilha, M.C. Molina, A. Mondal, Atanu Naskar, S. Pal, Leinig Antonio Perazolli, Georgiy Polupan, Jothi Ramalingam Rajabathar, R. Ramarajan, Alexandre Reily Rocha, Mohammad Reza Saeb, Azam Salmankhani, A. Sarkar, Rishabh Sehgal, Rakesh Sehgal, N.A. Shah, Vishal Sharma, V.G. Shrimali, Alexandre Zirpoli Simões, P.S. Solanki, Sudipta Som, Christos Spitas, Ronald Stübner, Jayashree Swaminathan, Hendrik C. Swart, S. Terny, K. Thangaraju, Victor Buratto Tinti, Lorena Álvarez-Contreras, Tetyana V. Torchynska, Isaac Velázquez-Hernández, Zhou Wang, Fenglong Wang, Lili Wu, Daniel Zanetti de Florio, Maryam Zarghami Dehghani, Xingfan Zhang, Xue Zhang, Peiru Zheng

Publikováno v: Metal Oxide Defects ISBN: 9780323855884

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b9c5e6af963096c7776abd11a70da558
https://doi.org/10.1016/b978-0-323-85588-4.01002-3

Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal‐oxide semiconductor application

Autor: Way Foong Lim, Hock Jin Quah

Publikováno v: International Journal of Energy Research. 46:4699-4711

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::df24a21bf37c0d237cb2deeabbc96f96
https://doi.org/10.1002/er.7466