Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Wataru Susaki"'
Autor:
Wataru Susaki, Takaaki Miura, Shinji Kinoshita, Akira Sakashita, Atsushi Fujimoto, Akihiro Tomioka
Publikováno v:
Colloids and Surfaces A: Physicochemical and Engineering Aspects. :474-478
In situ emission profiles of AlGaInP multiple quantum well laser diodes (LD's) observed by a near-field scanning optical microscope (NSOM) probe with an intentionally enlarged aperture shows a single broad elliptic profile, whereas the detected wavel
Publikováno v:
physica status solidi c. 3:683-687
The carrier lifetime in In{sub x}Ga{sub 1-x}As (x = 0.2, 0.25, 0.3) quantum well lasers with InGaAsP (E{sub g} = 1.55, 1.59 eV) barrier/waveguide layers is longer than that in In{sub x}Ga{sub 1-x}As (x = 0.14, 0.18, 0.31) quantum well lasers with GaA
Autor:
Wataru Hidaka1, Wataru Susaki1
Publikováno v:
Electronics & Communications in Japan, Part 2: Electronics. Dec97, Vol. 80 Issue 12, p30-36. 7p.
Autor:
Ssatoshi Yokota, Ryo Hattori, Hideo Takeuchi, Soichiro Ukawa, Akihiro Shima, Yoshitugu Yamamoto, Wataru Susaki, Nobuhito Ohno, Yutaka Mihashi
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 21:793-797
Subband energy levels of AlGaAs double quantum well (QW) layer structure with a separate confinement scheme are determined by photoreflectance at room temperature. Also subband energy levels are compared with those determined by the self-excited elec
Autor:
Wataru Susaki, Takeo Mizukoshi, Kouhei Morita, Kazuhiro Nishikawa, Masaharu Segawa, Hideharu Matsuura
Publikováno v:
Japanese Journal of Applied Physics. 41:496-500
Without any assumptions regarding residual impurity species in an undoped semiconductor, it is experimentally demonstrated that the densities and energy levels of impurities can be precisely determined by the graphical peak analysis method based on H
Autor:
Wataru SUSAKI
Publikováno v:
The Review of Laser Engineering. 29:613-619
Publikováno v:
physica status solidi c. 6:1517-1519
The band offsets and subband levels in a double quantum well layer for a 660nm-Ga0.4In0.6P/(Al0.5Ga0.5)0.5In0.5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 7:757-759
In situ emission profiles of AlGaInP multiple quantum well laser diodes (LD's) observed by a near-field scanning optical microscope aperture probe shows a single broad elliptic profile similar to a far-field observation, whereas the local emission sp
Publikováno v:
SHINKU. 42:525-529
Near-field modulation of laser diode emissions by an aperture probe of near-field optical microscope
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:2201-2203
In situ emission profiles of AlGaInP multiple quantum well laser diodes (LDs) observed by a near-field scanning optical microscope (NSOM) probe with an intentionally enlarged aperture shows a single broad elliptic profile, whereas the detected wavele