Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Wataru Hosoda"'
Autor:
Hirokazu Fujiwara, Kensei Terashima, Junya Otsuki, Nayuta Takemori, Harald O. Jeschke, Takanori Wakita, Yuko Yano, Wataru Hosoda, Noriyuki Kataoka, Atsushi Teruya, Masashi Kakihana, Masato Hedo, Takao Nakama, Yoshichika Ōnuki, Koichiro Yaji, Ayumi Harasawa, Kenta Kuroda, Shik Shin, Koji Horiba, Hiroshi Kumigashira, Yuji Muraoka, Takayoshi Yokoya
Publikováno v:
Physical Review B. 106
Autor:
Takanori Wakita, Noriyuki Kataoka, Yuji Muraoka, Takayoshi Yokoya, Wataru Hosoda, Masashi Tanaka, Takumi Taniguchi, Shin-ichi Fujimori
We have performed soft x-ray spectroscopy in order to study the photoirradiation time dependence of the valence band structure and chemical states of layered transition metal nitride chloride TiNCl. Under the soft x-ray irradiation, the intensities o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83672ae6893bb226925e3acac13d81dd
http://arxiv.org/abs/2010.01846
http://arxiv.org/abs/2010.01846
Autor:
Yuji Muraoka, Noriyuki Kataoka, Takayoshi Yokoya, Takanori Wakita, Takumi Taniguchi, Wataru Hosoda, Kensei Terashima, Masashi Tanaka
Electron-doped TiNCl is a superconductor, for which exotic mechanisms of the superconductivity have been discussed. However, difficulty in preparing large single-phase samples has prevented the direct observation of its electronic structure and how t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1372fc9ae610efac22386109c151c4f
Publikováno v:
AIJ Journal of Technology and Design. 19:303-308
Autor:
Kuniyuki Kakushima, Wataru Hosoda, Kenji Ozawa, T. Hattori, Hiroshi Iwai, Kenji Natori, Akira Nishiyama, Kazuo Tsutsui, Parhat Ahmet, Nobuyuki Sugii
Publikováno v:
ECS Transactions. 27:1105-1110
SB-MOSFETs were fabricated on SOI substrates by applying novel Schottky barrier height modulation technique of Er interlayer insertion at the interface of Ni/Si prior to Ni silicidation process. It was found that Er interlayer insertion lowered Schot
Autor:
Hiroshi Iwai, Nobuyuki Sugii, A.N. Chandorkar, Katsuya Matano, Parhat Ahmet, Wataru Hosoda, T. Hattori, Kuniyuki Kakushima, Kazuo Tsutsui, Kohei Noguchi
Publikováno v:
ECS Transactions. 16:29-34
We investigated the modulation of Schottky barrier height (Φb) of Ni silicide by inserting an Er layer between Si (100) substrate and Ni layer before silicidation annealing. Φb for electrons of NiSi was found to be decreased by using this technique
Autor:
Noriyuki Kataoka, Kensei Terashima, Masashi Tanaka, Wataru Hosoda, Takumi Taniguchi, Takanori Wakita, Yuji Muraoka, Takayoshi Yokoya
Publikováno v:
Journal of the Physical Society of Japan; 2019, Vol. 88 Issue 10, p104709-1-104709-5, 5p
Autor:
Yoshihisa Ohishi, Hiroshi Iwai, Kazuo Tsutsui, Parhat Ahmet, Wataru Hosoda, Kuniyuki Kakushima, Kohei Noguchi
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
A Schottky barrier height modulation technique for achieving a low Schottky barrier height in Ni silicide metal source/drain by Er layer insertion was reviewed. The effectiveness and possibility of the technique was demonstrated by fabricating Schott
Autor:
Kohei Noguchi, Wataru Hosoda, Katsuya Matano, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Arun Chandorkar, Takeo Hattori, H. Iwai
Publikováno v:
ECS Meeting Abstracts. :1851-1851
not Available.