Zobrazeno 1 - 10
of 548
pro vyhledávání: '"Wataru, Saito"'
Autor:
Wataru Saito, MD, Kuniaki Ota, MD, PhD, Toshifumi Takahashi, MD, PhD, Mika Sugihara, MD, PhD, Takehiko Matsuyama, MD, PhD, Yoshiaki Ota, MD, PhD, Koichiro Shimoya, MD, PhD
Publikováno v:
AJOG Global Reports, Vol 4, Iss 4, Pp 100399- (2024)
Acute Sheehan syndrome appearing within 6 weeks postpartum is a rare form of hypopituitarism caused by postpartum hemorrhage. A 37-year-old Japanese woman experienced a vulvar hematoma after spontaneous labor at 40 weeks gestation, leading to massive
Externí odkaz:
https://doaj.org/article/c302057af6b944f5a088a458d36de2b5
Autor:
Shogo Kawamura, Kuniaki Ota, Yoshiaki Ota, Toshifumi Takahashi, Hitomi Fujiwara, Keitaro Tasaka, Hana Okamoto, Yumiko Morimoto, Wataru Saito, Mika Sugihara, Takehiko Matsuyama, Eiji Koike, Mitsuru Shiota, Koichiro Shimoya
Publikováno v:
Frontiers in Medicine, Vol 11 (2024)
BackgroundRobotic simple hysterectomy (RSH) is the most common robotic gynecologic surgery in the United States. Uterine manipulators are commonly used to handle the uterus during laparoscopic surgery, but few studies have examined their necessity in
Externí odkaz:
https://doaj.org/article/3f4156b89897467ca0924ec8c65c9eb3
Autor:
Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Takayasu Sakurai, Shin-Ichi Nishizawa, Wataru Saito
Publikováno v:
IEEE Access, Vol 12, Pp 96936-96945 (2024)
The health monitoring prediction of power devices is vital for power electronics applications such as renewable converters, electric vehicles, and machine drives. One significant failure mode in the power cycle degradation of Insulated Gate Bipolar T
Externí odkaz:
https://doaj.org/article/56cc239cec64451d8dbdeb6da0aa6792
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 392-401 (2024)
This paper proposes a solid-state circuit breaker comprising silicon carbide (SiC) MOSFETs and a SiC diode, based on the principle of avalanche voltage clamping. The key challenge in realizing a solid-state circuit breaker lies in reducing conduction
Externí odkaz:
https://doaj.org/article/9c0b98bb4ce04e5ab6dcb986bad8fdb3
Autor:
Kazunori Hasegawa, Kanta Hara, Nobuyuki Shishido, Satoshi Nakano, Wataru Saito, Tamotsu Ninomiya
Publikováno v:
Power Electronic Devices and Components, Vol 7, Iss , Pp 100061- (2024)
This paper presents a power-cycling degradation monitoring method of an IGBT module with a VCE(sat) sensing circuit and junction temperature prediction by a three-dimensional structure model. A chopper circuit was introduced to provide a continuous-c
Externí odkaz:
https://doaj.org/article/3d377ab792d04205acba779def0fb4dc
Publikováno v:
Power Electronic Devices and Components, Vol 7, Iss , Pp 100054- (2024)
This paper reports the mechanism of gate voltage spike in the turn-off operation by a digital gate control. In the previous work, it was clarified that the gate voltage spike Vg_spike was generated by parasitic inductance and a large gate current cha
Externí odkaz:
https://doaj.org/article/9fbf9ea7b9d046df82c97feaa7773608
Publikováno v:
Power Electronic Devices and Components, Vol 6, Iss , Pp 100047- (2023)
This paper aims to clarify the effect of asymmetric gate inductance Lg and emitter inductance Le inside power modules with two parallel-connected IGBTs on switching characteristics when a three-step digital gate driver is employed. Five types of IGBT
Externí odkaz:
https://doaj.org/article/db9bf21cb1e24e7da7ea335324224733
Publikováno v:
Power Electronic Devices and Components, Vol 6, Iss , Pp 100052- (2023)
This paper presents a new detection method of bond wire lift-off in Insulated Gate Bipolar Transistor (IGBT) power module. The bond wire lift-off is a major failure mode in power cycle degradation of the IGBT module, and many monitoring methods have
Externí odkaz:
https://doaj.org/article/8871d5630c9b4163bbfac6019ba62d7d
Publikováno v:
IEEE Access, Vol 11, Pp 6632-6640 (2023)
This paper clarifies the effect of gate inductance $L_{g}$ inside IGBT modules on gate voltage spikes when a digital gate driver is employed. Three IGBT modules with different $L_{g}$ were fabricated to implement double pulse tests by conventional ga
Externí odkaz:
https://doaj.org/article/c3482012efd14d0484119e4a6246232d
Autor:
Wataru Saito, Shin-Ichi Nishizawa
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 23-28 (2022)
Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation. Although the scaling design improves tur
Externí odkaz:
https://doaj.org/article/99552225b0614556980a45481d9c367f