Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Watari Kume"'
Autor:
Kazutoshi Takiya, Jun-ichi Shirakashi, Yusuke Tomoda, Shunsuke Ueno, Watari Kume, Takato Watanabe
Publikováno v:
Applied Surface Science. 258:2029-2033
We report a newly investigated approach for the control of the tunnel resistance of nanogaps using field-emission-induced electromigration (“activation”), in order to decrease the power consumption during the process. The method is demonstrated b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::538dafe4f3a1d8916e0c64929c9f1449
https://doi.org/10.1016/j.apsusc.2011.04.114
https://doi.org/10.1016/j.apsusc.2011.04.114
Autor:
Watari Kume, Jun-ichi Shirakashi, Michinobu Hanada, Yusuke Tomoda, Kazutoshi Takiya, Shunsuke Ueno
Publikováno v:
Applied Surface Science. 258:2153-2156
We report a simple and easy method for the integration of planar-type single-electron transistors (SETs). This method is based on electromigration induced by a field emission current, which is so-called “activation”. The integration of two SETs w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::341af7f58831cc0a5a02c071ae3f6937
https://doi.org/10.1016/j.apsusc.2011.03.016
https://doi.org/10.1016/j.apsusc.2011.03.016
Autor:
Shunsuke, Ueno, Yusuke, Tomoda, Watari, Kume, Michinobu, Hanada, Kazutoshi, Takiya, Jun-ichi, Shirakashi
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:6258-6261
A novel technique for the integration of planar-type single-electron transistors (SETs) composed of nanogaps is presented. This technique is based on the electromigration procedure, which is caused by a field emission current. The technique is called
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0393e2291e58e9ac423bf9a1ec96cca6
https://doi.org/10.1166/jnn.2011.4328
https://doi.org/10.1166/jnn.2011.4328
Autor:
Takato Watanabe, Watari Kume, Shunsuke Ueno, Jun-ichi Shirakashi, Yusuke Tomoda, Kazutoshi Takiya
Publikováno v:
Journal of nanoscience and nanotechnology. 11(7)
A newly investigated technique for the tuning of the tunnel resistance of nanogaps using electromigration method induced by a field emission current is presented to reduce the power consumption during the process. The method is called "activation" an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92826e17a80185db248452b0f7805100
https://pubmed.ncbi.nlm.nih.gov/22121699
https://pubmed.ncbi.nlm.nih.gov/22121699
Autor:
Michinobu Hanada, Jun-ichi Shirakashi, So-ichiro Itami, Yusuke Tomoda, Watari Kume, Tadataka Watanabe
Publikováno v:
Journal of Physics: Conference Series. 200:062035
The authors report electrical and magnetoresistance properties of planar-type Ni/Vacuum/Ni ferromagnetic tunnel junctions fabricated by novel electromigration method. This technique is based on the motion of atoms caused by field-emission-induced ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9fff31099c2b84e9d1c370024278594
https://doi.org/10.1088/1742-6596/200/6/062035
https://doi.org/10.1088/1742-6596/200/6/062035