Zobrazeno 1 - 10
of 342
pro vyhledávání: '"Wasserman Daniel"'
Autor:
Chang, Woo Je, Green, Allison M., Sakotic, Zarko, Wasserman, Daniel, Truskett, Thomas M., Milliron, Delia J.
Based on experimental and simulation methods we helped develop, we are advancing mechanistic understanding of how self-assembled NC metamaterials can produce distinctive near- and far-field optical properties not readily achievable in lithographicall
Externí odkaz:
http://arxiv.org/abs/2409.15573
Reducing device volume is one of the key requirements for advanced nanophotonic technologies, however this demand is often at odds with designing highly absorbing elements which usually require sizeable thicknesses, such as for detector and sensor ap
Externí odkaz:
http://arxiv.org/abs/2310.02811
Publikováno v:
Nanophotonics, Vol 13, Iss 25, Pp 4625-4637 (2024)
Photonic funnels, microscale conical waveguides that have been recently realized in the mid-IR spectral range with the help of an all-semiconductor designer metal material platform, are promising devices for efficient coupling of light between the na
Externí odkaz:
https://doaj.org/article/ab1aadedcf7e45f1af36a2070911ea9c
Autor:
Dhingra, Pankul, Su, Patrick, Li, Brian D., Hool, Ryan D., Muhowski, Aaron J., Kim, Mijung, Wasserman, Daniel, Dallesasse, John, Lee, Minjoo Larry
Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and antimonid
Externí odkaz:
http://arxiv.org/abs/2109.12419
Autor:
Meyer, Jarod, Muhowski, Aaron J., Nordin, Leland J., Hughes, Eamonn T., Haidet, Brian B., Wasserman, Daniel, Mukherjee, Kunal
Publikováno v:
APL Materials 9, 111112 (2021)
We report on photoluminescence in the 3-7 $\mu$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures bel
Externí odkaz:
http://arxiv.org/abs/2108.12701
We present an infrared photodetector leveraging an all-epitaxial device architecture consisting of a 'designer' plasmonic metal integrated with a quantum-engineered detector structure, all in a mature III-V semiconductor material system. Incident lig
Externí odkaz:
http://arxiv.org/abs/2107.04143
Autor:
Briggs, Andrew F., Nordin, Leland, Muhowski, Aaron J., Simmons, Evan, Dhingra, Pankul, Lee, Minjoo L., Podolskiy, Viktor A., Wasserman, Daniel, Bank, Seth R.
Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and pla
Externí odkaz:
http://arxiv.org/abs/2005.03163
Akademický článek
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Autor:
Li, Kun, Simmons, Evan, Briggs, A. F., Bank, S. R., Wasserman, Daniel, Podolskiy, Viktor A., Narimanov, Evgenii E.
The interaction of free electrons with electromagnetic excitation is the fundamental mechanism responsible for ultra-strong confinement of light that, in turn, enables biosensing, near-field microscopy, optical cloaking, sub-wavelength focusing, and
Externí odkaz:
http://arxiv.org/abs/1912.09434
Akademický článek
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