MXene as Emerging Low Dimensional Material in Modern Energy and Bio Application: A Review

Autor: A. Arifutzzaman, Chin Fhong Soon, Marlia Morsin, Gim Pao Lim, Navid Aslfattahi, Warsuzarina Mat Jubadi, Sangeetha Siva Sangu, Mohamed Shuaib Mohamed Saheed, Nafarizal Nayan, Rahman Saidur

Publikováno v: Journal of Nano Research. 74:109-154

MXene is a recently emerged two dimensional (2D) layered materials, a novel series of transition metal carbides, nitrides and carbonitrides were established by a group of scientists from Drexel University in 2011. Multi-layered MXene nanomaterials ha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a35ae09251e110510a4e6c8ce31d026
https://doi.org/10.4028/p-x49od6

Alternative Spin-On-Glass (SoG) material characterization for Deep-Submicron (<0.35 um) soft reflow fabrication process

Autor: Warsuzarina Mat Jubadi, F. Packeer, Mohamad Adzhar Md Zawawi, Mohamed Missous, N. M. Noh, N. Z.I. Hashim

Publikováno v: Packeer, F, Zawawi, M A M, Hashim, N Z I, Noh, N M, Jubadi, W M & Missous, M 2018, ' Alternative Spin-On-Glass (SoG) material characterization for Deep-Submicron ( <0.35 um) soft reflow fabrication process ', IOP Conference Series: Materials Science and Engineering, vol. 380, no. 1, 012005 . https://doi.org/10.1088/1757-899X/380/1/012005

Currently a submicron soft reflow process developed in University of Manchester uses silicon nitride (Si3N4) as the hard mask layer to support the T-Gate structure of pHEMTs in order to make it mechanically stable. However, an alternative material kn

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98d133aafd5e2a7530ec40e7f4cfe974
https://doi.org/10.1088/1757-899X/380/1/012005

Comparative study of symmetrical OTA performance in 180 nm, 130 nm and 90 nm CMOS technology

Autor: Siti Hawa Ruslan, Nabihah Ahmad, Rahmat Sanudin, Wan Mohammad Ehsan Aiman bin Wan Jusoh, Warsuzarina Mat Jubadi

Publikováno v: Indonesian Journal of Electrical Engineering and Computer Science. 14:230

In this paper, the comparative study of symmetrical Operational Transconductance Amplifier (OTA) performance between 180 nm, 130 nm and 90 nm CMOS technology have been done thoroughly to find the relationship between voltage supply and bias current w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7ce15ef30b138cb426ab6e3ae37a9734
https://doi.org/10.11591/ijeecs.v14.i1.pp230-240

Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier

Autor: Warsuzarina Mat Jubadi, F. Packeer, Mohamed Missous

Publikováno v: Jubadi, W M, Packeer, F & Missous, M 2017, ' Optimization of empirical modelling of advanced highly strained In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As pHEMTs for low noise amplifier ', International Journal of Electrical and Computer Engineering, vol. 7, no. 6, pp. 3002-3009 . https://doi.org/10.11591/ijece.v7i6.pp3002-3009

An optimized empirical modelling for a 0.25µm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de7fe4a7832358a648572e73f9123412
https://doi.org/10.11591/ijece.v7i6.pp3002-3009

Simulations of variable I-layer thickness effects on silicon PIN diode I-V characteristics

Autor: Siti Norafzaniza Mohammad Noor, Warsuzarina Mat Jubadi

Publikováno v: 2010 IEEE Symposium on Industrial Electronics and Applications (ISIEA).

PIN Diode gains its name from the idealized intrinsically doped, I-layer, sandwiched between a P-type and N-type layer. The N-layer of PIN diode was doped with Arsenic and the P-layer doped with Boron. The performance of the PIN diode primarily depen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b1cf356bda0bbcf2127b89930e365070
https://doi.org/10.1109/isiea.2010.5679427