Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Warsuzarina Mat Jubadi"'
Autor:
A. Arifutzzaman, Chin Fhong Soon, Marlia Morsin, Gim Pao Lim, Navid Aslfattahi, Warsuzarina Mat Jubadi, Sangeetha Siva Sangu, Mohamed Shuaib Mohamed Saheed, Nafarizal Nayan, Rahman Saidur
Publikováno v:
Journal of Nano Research. 74:109-154
MXene is a recently emerged two dimensional (2D) layered materials, a novel series of transition metal carbides, nitrides and carbonitrides were established by a group of scientists from Drexel University in 2011. Multi-layered MXene nanomaterials ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a35ae09251e110510a4e6c8ce31d026
https://doi.org/10.4028/p-x49od6
https://doi.org/10.4028/p-x49od6
Autor:
Lee Che Yang, Warsuzarina Mat Jubadi
Publikováno v:
Indonesian Journal of Electrical Engineering and Computer Science. 18:276
This project proposed a design of low power CMOS-based thermal detector which can detect the temperature of processor such as in Central Processing Unit. By re-designing temperature detector circuit using CMOS technology, the reduction in power consu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffe7234efb05bce8486af2d548744e32
https://doi.org/10.11591/ijeecs.v18.i1.pp276-283
https://doi.org/10.11591/ijeecs.v18.i1.pp276-283
Autor:
Warsuzarina Mat Jubadi, F. Packeer, Mohamad Adzhar Md Zawawi, Mohamed Missous, N. M. Noh, N. Z.I. Hashim
Publikováno v:
Packeer, F, Zawawi, M A M, Hashim, N Z I, Noh, N M, Jubadi, W M & Missous, M 2018, ' Alternative Spin-On-Glass (SoG) material characterization for Deep-Submicron ( <0.35 um) soft reflow fabrication process ', IOP Conference Series: Materials Science and Engineering, vol. 380, no. 1, 012005 . https://doi.org/10.1088/1757-899X/380/1/012005
Currently a submicron soft reflow process developed in University of Manchester uses silicon nitride (Si3N4) as the hard mask layer to support the T-Gate structure of pHEMTs in order to make it mechanically stable. However, an alternative material kn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98d133aafd5e2a7530ec40e7f4cfe974
https://doi.org/10.1088/1757-899X/380/1/012005
https://doi.org/10.1088/1757-899X/380/1/012005
Autor:
Rosnah Mohd Zin, Chin Fhong Soon, Mohd Zuhri Ab Sani, Elfa Rizan Rizon, Kian Sek Tee, Mohd Khairul Ahmad, Nabihah@Nornabihah Ahmad, Warsuzarina Mat Jubadi, Nafarizal Nayan
Publikováno v:
AIP Conference Proceedings.
There are increasing interests in the application of cold atmospheric plasma device for the application in surface science and medical field. Numerous studies focused on the effects of plasma emission onto living organisms. This report presents the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f95ee6951dfcbfb75eb8be54f6d598a8
https://doi.org/10.1063/1.5002041
https://doi.org/10.1063/1.5002041
Publikováno v:
Journal of Physics: Conference Series. 1049:012069
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0efec6e75c1326a6756ac751362ad9a1
https://doi.org/10.1088/1742-6596/1049/1/012069
https://doi.org/10.1088/1742-6596/1049/1/012069
Publikováno v:
Jubadi, W M, Packeer, F & Missous, M 2017, ' Optimization of empirical modelling of advanced highly strained In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As pHEMTs for low noise amplifier ', International Journal of Electrical and Computer Engineering, vol. 7, no. 6, pp. 3002-3009 . https://doi.org/10.11591/ijece.v7i6.pp3002-3009
An optimized empirical modelling for a 0.25µm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de7fe4a7832358a648572e73f9123412
https://doi.org/10.11591/ijece.v7i6.pp3002-3009
https://doi.org/10.11591/ijece.v7i6.pp3002-3009
Publikováno v:
APCCAS
Many people have problems with pest rodents. Rats eat our crop, contaminate our stored food, damage our buildings and spread dangerous diseases to people and livestock. In this project, the ultrasonic repelling device has been developed to solve the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c14ed3b4d5958c5d84bc68114ac22f2
https://doi.org/10.1109/apccas.2010.5774839
https://doi.org/10.1109/apccas.2010.5774839
Publikováno v:
2010 IEEE Symposium on Industrial Electronics and Applications (ISIEA).
PIN Diode gains its name from the idealized intrinsically doped, I-layer, sandwiched between a P-type and N-type layer. The N-layer of PIN diode was doped with Arsenic and the P-layer doped with Boron. The performance of the PIN diode primarily depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1cf356bda0bbcf2127b89930e365070
https://doi.org/10.1109/isiea.2010.5679427
https://doi.org/10.1109/isiea.2010.5679427
Publikováno v:
2010 IEEE Symposium on Industrial Electronics and Applications (ISIEA).
Advanced Encryption Standard (AES) is one of the most common symmetric encryption algorithms. The hardware complexity in AES is dominated by AES substitution box (S-box) which is considered as one of the most complicated and costly part of the system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5bf92803ac41109701a75e38038322e
https://doi.org/10.1109/isiea.2010.5679375
https://doi.org/10.1109/isiea.2010.5679375
Autor:
Mazita Mohamad, Rosnah Mohd Zin, Nurain Izzati Shuhaimi, Warsuzarina Mat Jubadi, Ruzaini Tugiman, Nabiah Binti Zinal
Publikováno v:
2010 IEEE International Conference on Semiconductor Electronics (ICSE2010).
The performance of the PIN diode is very much depends on the chip geometry and the semiconductor material used, especially in the intrinsic region. The biasing voltage applied to the PIN diode determines the amount of holes and electrons injected int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9da0805453e35e034a4ad84b546f57bd
https://doi.org/10.1109/smelec.2010.5549491
https://doi.org/10.1109/smelec.2010.5549491