Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Warren D. Grobman"'
Autor:
Judy Huckabay, Warren D. Grobman, Wolfgang Staud, Robert Pack, Rachid Salik, Valery Axelrad, Victor V. Boksha, Ruoping Wang, Andrei Shibkov
Publikováno v:
SPIE Proceedings.
Subwavelength lithography at low contrast, or low-k1 factor, leads to new requirements for design, design analysis, and design verification techniques. These techniques must account for inherent physical circuit feature distortions resulting from lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19b106d9b5809ce568a74e06109d646d
https://doi.org/10.1117/12.499089
https://doi.org/10.1117/12.499089
Publikováno v:
SPIE Proceedings.
In this paper, we discuss rule-based and model-based tiling methodologies for interconnect layers and their implications for design flows and performance. The addition of these 'dummy' tiling metal features modifies the final physical design and redu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::200b73383f569a0bb044552efc8170b4
https://doi.org/10.1117/12.475690
https://doi.org/10.1117/12.475690
Autor:
Warren D. Grobman
Publikováno v:
SPIE Proceedings.
Dramatically increasing mask set costs, long-loop design-fabrication iterations, and lithography of unprecedented complexity and cost threaten to disrupt time-accepted IC industry progression as described by Moore"s Law. Practical and cost-effective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4c3ba363e81d9b6e3644e715377b47f
https://doi.org/10.1117/12.475697
https://doi.org/10.1117/12.475697
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
In recent years mask data preparation (MDP) has been complicated by a number of factors, including the introduction of resolution enhancement technologies such as optical proximity correction (OPC) and phase shift masks. These complications not only
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38f33e1fad2b065c95f98e8f316ae127
https://doi.org/10.1117/12.458289
https://doi.org/10.1117/12.458289
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
In this paper we introduce the concept and design of a novel phase shift mask technology, Polarized Phase Shift Mask (P:PSM). The P:PSM technology utilizes non-interference between orthogonally polarized light sources to avoid undesired destructive i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12707f8a2295d231a4f45813ad8647dd
https://doi.org/10.1117/12.458317
https://doi.org/10.1117/12.458317
Publikováno v:
ISPD
In this paper, we briefly describe the lithography developments known as RET (Resolution Enhancement Technologies),which include off-axis illumination in litho tools,Optical and Process Correction (OPC), and phase shifting masks (PSM). All of these t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7df17df4becac0c809892bc40bd20e56
https://doi.org/10.1145/369691.369730
https://doi.org/10.1145/369691.369730
Publikováno v:
DAC
In this paper, we review phase shift lithography, rule vs. model based methods for OPC and model-based tiling, and discuss their implications for layout and verificat ion. We will discuss novel approaches, using polarizing films on reticles, which ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::306a09418e529e8a44db1059e451386b
https://doi.org/10.1145/378239.378332
https://doi.org/10.1145/378239.378332
Publikováno v:
Proceedings of the 36th annual ACM/IEEE Design Automation Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56f1464aad03e5c21dad0a6e44e8f4da
https://doi.org/10.1145/309847.310070
https://doi.org/10.1145/309847.310070
Autor:
Warren D. Grobman, Paul G. Y. Tsui, Edward O. Travis, Kevin D. Lucas, Alfred J. Reich, Tam Vuong, Michael E. Kling, Percy V. Gilbert, H. Chuang, Jeff P. West, Bernard J. Roman
Publikováno v:
SPIE Proceedings.
Simplified 2-D Optical Proximity Correction (OPC) algorithms have been devised, calibrated and implemented on a state-of- the-art 0.25 micrometer random logic process in order to reduce metal line pullback on critical layers. The techniques used are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a0bbd340f655f0afb477edb6c6ffca2
https://doi.org/10.1117/12.310749
https://doi.org/10.1117/12.310749
Autor:
Warren D. Grobman
Publikováno v:
Journal of Vacuum Science and Technology. 17:1156-1163
An overview is given of a pattern data preparation system which changes computer‐aided design (CAD) data to data which drives the pattern generator of a vector scan electron beam system. The software described is basically independent of the partic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c1a8fdd417713439bd8e271e608e67c
https://doi.org/10.1116/1.570632
https://doi.org/10.1116/1.570632