Dielectric reliability in high-voltage GaN metal-insulator-semiconductor high electron mobility transistors

Autor: Warnock, Shireen M

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.
Cataloged from PDF version of thesis.
Includes bibliographical references.
As the demand for more energy-efficient

Externí odkaz: http://hdl.handle.net/1721.1/112032

A ballistic transport model for HEMTs and III-V MOSFETs

Autor: Warnock, Shireen M

Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2013.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 77-78).
As silicon MOSFETs keep s

Externí odkaz: http://hdl.handle.net/1721.1/85520

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The effect of neutral beam etching on device isolation in AlGaN/GaN HEMTs.

Autor: Hemmi, Fuyumi, Thomas, Cedric, Lai, Yi-Chun, Higo, Akio, Guo, Alex, Warnock, Shireen, del Alamo, Jesus. A., Samukawa, Seiji, Otsuji, Taiichi, Suemitsu, Tetsuya

Publikováno v: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS); 2016, p1-1, 1p