Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Wantang Wang"'
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 13, Pp n/a-n/a (2023)
Abstract 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is
Externí odkaz:
https://doaj.org/article/9571f632fa98417591eba6ef196bbb1b
Publikováno v:
Silicon. 14:7473-7481
The colloidal silica is used as the abrasive for the copper Chemical Mechanical Polishing slurry in integrated circuit multilayer copper wiring. The aggregation of colloidal silica in the slurries tends to aggregate spontaneously, resulting in the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ced0c607e167ff8077c3f0d894d6c0c1
https://doi.org/10.1007/s12633-021-01448-y
https://doi.org/10.1007/s12633-021-01448-y
Publikováno v:
Materials Science in Semiconductor Processing. 162:107474
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::348da05a8d732047ead703f31044f5d8
https://doi.org/10.1016/j.mssp.2023.107474
https://doi.org/10.1016/j.mssp.2023.107474
Autor:
Yebo Zhu, Yinchan Zhang, Chenghui Yang, Jiakai Zhou, Wantang Wang, Tianlin Zhang, He Wang, Xinhuan Niu, Ru Wang, Zhi Wang, Ziyang Hou
Publikováno v:
Nano Select. 3:688-702
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78e0483a27cc3a1390e7ca84b93c7948
https://doi.org/10.1002/nano.202100028
https://doi.org/10.1002/nano.202100028
Publikováno v:
Journal of Applied Electrochemistry. 51:1479-1489
In the process of multilayer copper wiring CMP (chemical mechanical polishing), electrochemical corrosion will occur due to the contact between slurries and metal interface. Inhibitors are added to slurries to reduce the degree of corrosion reactions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37ae310eae1211ae9d503ae79da1324e
https://doi.org/10.1007/s10800-021-01587-5
https://doi.org/10.1007/s10800-021-01587-5
The colloidal silica is usually used as the abrasive for the copper CMP polishing slurry in integrated circuit multilayer copper wiring. The aggregation of colloidal silica in the slurries tend to aggregate spontaneously, resulting in the continuous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1905e3cafd5d3f6974c1b50813de8518
https://doi.org/10.21203/rs.3.rs-739722/v1
https://doi.org/10.21203/rs.3.rs-739722/v1
Autor:
Jiakai Zhou, Qian Huang, Qun Zhao, Wantang Wang, Xinhuan Niu, Yangang He, Xianglin Su, Ying Zhao, Guofu Hou
Publikováno v:
Solar Energy Materials and Solar Cells. 245:111865
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef624129dd67a2467871a97ba2dc25ed
https://doi.org/10.1016/j.solmat.2022.111865
https://doi.org/10.1016/j.solmat.2022.111865
Publikováno v:
Applied Surface Science. 597:153703
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6eaf4f1dd89205354c9bbcbfcbdfc89
https://doi.org/10.1016/j.apsusc.2022.153703
https://doi.org/10.1016/j.apsusc.2022.153703
Cobalt, as the barrier layer material for 14 nm copper interconnection, has been widely applied owing to its superior characteristics of low resistivity, excellent adhesion performance and blocking properties for copper. Most of the preciously develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3104::b193757a43635af71f8a9f3f92785a72
https://hdl.handle.net/20.500.12418/13071
https://hdl.handle.net/20.500.12418/13071
Publikováno v:
Materials Science in Semiconductor Processing. 139:106321
This article proposed an improvement plan for the slurry to reduce the dishing caused during copper chemical mechanical polishing (CMP) of the interconnect structure. According to the difference in the pressure between the concave and convex parts of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1395fd07ada1f5be36af64f77257a426
https://doi.org/10.1016/j.mssp.2021.106321
https://doi.org/10.1016/j.mssp.2021.106321