Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Wanshun Zhao"'
Publikováno v:
Arabian Journal of Chemistry, Vol 17, Iss 5, Pp 105731- (2024)
Cisplatin-induced acute kidney injury (CIAKI) is a major dose-limiting toxicity of cisplatin treatment. The mechanisms of CIAKI involve the production of inflammation, apoptosis and oxidative stress. Palmatine, an isoquinoline alkaloid has anti-infla
Externí odkaz:
https://doaj.org/article/609618db3bb24b739e9540542ba7c74d
Publikováno v:
Crystals, Vol 12, Iss 6, p 788 (2022)
Wafer-scale on-axis 4H-SiC epitaxial layers with very low roughness were obtained in this study. By performing carbon-rich hydrogen etching and epitaxial growth of the epitaxial layer at different temperatures, local mirror regions (LMRs) with root m
Externí odkaz:
https://doaj.org/article/f943daf21ee64a5e97236f30c14df59b
Autor:
Shangyu Yang, Siqi Zhao, Junhong Chen, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Yang Zhang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Publikováno v:
Journal of Crystal Growth. 612:127058
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59b863dde93dd29ac1370db55285ec1c
https://doi.org/10.1016/j.jcrysgro.2022.127058
https://doi.org/10.1016/j.jcrysgro.2022.127058
Publikováno v:
Microchemical Journal. 187:108438
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4b8cbeaf0ed6dd5d6ae64d19769cd66
https://doi.org/10.1016/j.microc.2023.108438
https://doi.org/10.1016/j.microc.2023.108438
Autor:
Lei Wang, Xingfang Liu, Yan Guoguo, Wanshun Zhao, Shen Zhanwei, Guosheng Sun, Feng Zhang, Yiping Zeng, Wen Zhengxin
Publikováno v:
IEEE Transactions on Electron Devices. 67:4046-4053
A reverse-channel 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor (UMOSFET) (RC-MOS) is proposed in this article. The RC-MOS is demonstrated to have low specific ON-resistance ( $R_{\mathrm{ON,sp}}$ ) by numerical simulation. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72fa2462dd3a45924e3cebcfda13150b
https://doi.org/10.1109/ted.2020.3005899
https://doi.org/10.1109/ted.2020.3005899
Autor:
Junhong Chen, Min Guan, Shangyu Yang, Siqi Zhao, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Publikováno v:
Journal of Crystal Growth. 604:127048
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a0386f9f5546d5d2ee51ffbf3276dc6
https://doi.org/10.1016/j.jcrysgro.2022.127048
https://doi.org/10.1016/j.jcrysgro.2022.127048
Autor:
Siqi Zhao, Junhong Chen, Shangyu Yang, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Publikováno v:
Journal of Crystal Growth. 603:127008
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::905ce75d251a724b45d420cb03e3077c
https://doi.org/10.1016/j.jcrysgro.2022.127008
https://doi.org/10.1016/j.jcrysgro.2022.127008
Autor:
Fei Yang, Lixin Tian, Zhanwei Shen, Guoguo Yan, Xingfang Liu, Wanshun Zhao, Lei Wang, Guosheng Sun, Junmin Wu, Feng Zhang, Yiping Zeng
Publikováno v:
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61786ed598155b6669b7db4d664a5aa1
https://doi.org/10.1109/wipdaasia51810.2021.9656100
https://doi.org/10.1109/wipdaasia51810.2021.9656100
Autor:
Yinshu Wang, Bowen Lv, Guosheng Sun, Wen Zhengxin, Yiping Zeng, Yan Guoguo, Lei Wang, Xingfang Liu, Chao Liu, Shen Zhanwei, Feng Zhang, Wanshun Zhao, Jun Chen
Publikováno v:
Materials Science in Semiconductor Processing. 94:107-115
We have investigated and compared the influence of annealing temperature on composition and interfacial properties of AlN thin films deposited on 4H-SiC substrates by atomic layer deposition using trimethylaluminum (TMA) and ammonia as precursors at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::788be2c28bccbe35a4c217d4235daea2
https://doi.org/10.1016/j.mssp.2019.01.045
https://doi.org/10.1016/j.mssp.2019.01.045
Autor:
Yiping Zeng, Wanshun Zhao, Junxiu Chen, Guo Sheng Sun, Fangfang Zhang, Min-Xin Guan, Yan Guoguo, Shen Zhanwei, Youping He, Xingfang Liu, Lishuang Wang, Wen Zhengxin
Publikováno v:
Journal of Crystal Growth. 507:283-287
Although homoepitaxial growth of multiple 4H-SiC wafers in one run can be realized in commercial specialized chemical vapor deposition equipment, wafers must be loaded onto a rotatable large susceptor and overspread on it, which leads to the diameter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9845a7b07f956eb90eba2cdd1c6ae53
https://doi.org/10.1016/j.jcrysgro.2018.10.055
https://doi.org/10.1016/j.jcrysgro.2018.10.055