Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Wanseob Lee"'
Autor:
Wanik Cho, Jongseok Jung, Jongwoo Kim, Junghoon Ham, Sangkyu Lee, Yujong Noh, Dauni Kim, Wanseob Lee, Kayoung Cho, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Eunwoo Jo, Hanna Cho, Jong-Seok Kim, Chankeun Kwon, Cheolioona Park, Hveonsu Nam, Haeun Won, Taeho Kim, Kyeonghwan Park, Sanghoon Oh, Jinhyun Ban, Junyoung Park, Jaehyeon Shin, Taisik Shin, Junseo Jang, Jiseong Mun, Jehyun Choi, Hyunseung Choi, Suna-Wook Choi, Wonsun Park, Dongkvu Yoon, Minsu Kim, Junvoun Lim, Chiwook An, Hyunyoung Shirr, Haesoon Oh, Haechan Park, Sungbo Shim, Hwang Huh, Honasok Choi, Seungpil Lee, Jaesuna Sim, Kichana Gwon, Jumsoo Kim, Woopyo Jeong, Jungdal Choi, Kyo-Won Jin
Publikováno v:
2022 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d26dc3c61a3840646dbee3c4b8ab0fa8
https://doi.org/10.1109/isscc42614.2022.9731785
https://doi.org/10.1109/isscc42614.2022.9731785
Autor:
Jin-woo Lee, Sunghoon Ahn, Byung-Ryul Kim, Kichang Chun, Pil Seon Yoo, Taisik Shin, Yonghwan Hong, Sungwook Choi, Nam-Kyeong Kim, Kunwoo Park, Wanseob Lee, Sunghyun Jung, Tae-Yun Kim, Sungdae Choi, Byoung-Young Kim, Ingon Yang, Hyun-Chul Cho, Jaehyeon Shin, Hyunjong Jin, Duckju Kim, Youngdon Jung, Jinwoong Kim
Publikováno v:
ISSCC
This paper presents a 64Gb MLC NAND-Flash memory fabricated with 16nm CMOS process technology to achieve high density and as small as 93.4mm2 die area. The chip consists of two planes of 1072 blocks each. A block consists of a string with 128 cells a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40a7869d0a745587ee0c19a006706752
https://doi.org/10.1109/isscc.2014.6757455
https://doi.org/10.1109/isscc.2014.6757455