Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Wanliang Liu"'
Autor:
Zhiqing Wang, Ziqing Wang, Baohui Lu, Xingzhou Quan, Guangyuan Zhao, Ze Zhang, Wanliang Liu, Yixin Tian
Publikováno v:
Frontiers in Microbiology, Vol 13 (2022)
In the present study, the inhibitory potential of 14 Trichoderma strains (isolated from Asarum rhizosphere) was investigated against Sclerotinia asari using the plate dilution method. The activity of antioxidant enzymes viz; catalase (CAT), peroxidas
Externí odkaz:
https://doaj.org/article/7c56fb59b6be4034ba059e9c8ebf7661
Autor:
Stephen R. Elliott, Kaiqi Li, Bin Liu, Liangcai Wu, Jian Zhou, Zhimei Sun, Wanliang Liu, Zhitang Song
Publikováno v:
Science Bulletin. 66:2217-2224
By controlling the amorphous-to-crystalline relative volume, chalcogenide phase-change memory materials can provide multi-level data storage (MLS), which offers great potential for high-density storage-class memory and neuro-inspired computing. Howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cf43eaea4be72a694d9fe7c01fe6e02
https://doi.org/10.1016/j.scib.2021.07.018
https://doi.org/10.1016/j.scib.2021.07.018
Publikováno v:
ACS Applied Materials & Interfaces. 12:20672-20679
The disadvantages of high power consumption and slow operating speed hinder the application of phase-change materials (PCMs) for a universal memory. In this work, based on a rigorous experimental scheme, we synthesized a series of YxSb2-xTe3 (0 ≤ x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7481a8068cd63f3f31ee3b350317fff
https://doi.org/10.1021/acsami.0c03027
https://doi.org/10.1021/acsami.0c03027
Autor:
Bin, Liu, Wanliang, Liu, Zhen, Li, Kaiqi, Li, Liangcai, Wu, Jian, Zhou, Zhitang, Song, Zhimei, Sun
Publikováno v:
ACS applied materialsinterfaces. 12(18)
The disadvantages of high power consumption and slow operating speed hinder the application of phase-change materials (PCMs) for a universal memory. In this work, based on a rigorous experimental scheme, we synthesized a series of Y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ed475782b2a9c0f2c0136043c003c631
https://pubmed.ncbi.nlm.nih.gov/32283921
https://pubmed.ncbi.nlm.nih.gov/32283921
Autor:
Jia Cai, Minwen Zhang, Lei Zhang, Xueqin Guo, Chunhua Peng, Cong Hua, Linlin Yang, Fei Gao, Jiawei Tong, Bo Wang, Xiaoxia Yang, Ling Li, Lina Wang, Wenjun Zeng, Fan Yang, Fengzhen Chen, Lijin You, Wanliang Liu, Ke Liu, Zhiyong Li, Tao Yang, Feiyu Zhou, Bo Wan, Yawen Yang, Xun Xu, Xiaofeng Wei
Publikováno v:
Database: The Journal of Biological Databases and Curation
With the application and development of high-throughput sequencing technology in life and health sciences, massive multi-omics data brings the problem of efficient management and utilization. Database development and biocuration are the prerequisites
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3916d50851703e00daca9d722b1255ac
https://doi.org/10.1093/database/baaa055
https://doi.org/10.1093/database/baaa055
Publikováno v:
Chinese Physics B. 30:086801
Mo, as a dopant, is doped into SbTe to improve its thermal stability. It is shown in this paper that the Mo-doped Sb2Te3 (Mo0.26Sb2Te3, MST) material possesses phase change memory (PCM) applications. MST has better thermal stability than Sb2Te3(ST) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7635ad640545cad7677d74e50c21ba6d
https://doi.org/10.1088/1674-1056/abe22d
https://doi.org/10.1088/1674-1056/abe22d
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:014006
The research progress of global nonvolatile phase change memory (PCM) is quite effective. Among them, chalcogenide Sb2Te is considered as one of the important materials with high operation speed. In this work, we put forward a 1:1 AlSc alloy doped Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bef77982c55f29c9448d1e439b239be
https://doi.org/10.1149/2162-8777/abdc43
https://doi.org/10.1149/2162-8777/abdc43
Publikováno v:
ECS Journal of Solid State Science & Technology; Jan2021, Vol. 10 Issue 1, p1-4, 4p
Publikováno v:
Applied Physics Express. 12:125006
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::381ed0ebb69aa2e74f6f6b638a80d71d
https://doi.org/10.7567/1882-0786/ab5312
https://doi.org/10.7567/1882-0786/ab5312
Autor:
Sannian Song, Liangcai Wu, Zhitang Song, Wanliang Liu, Shilong Lv, Guangyu Liu, Min Zhu, Sifan Zhang
Publikováno v:
Applied Physics Letters. 115:133505
Phase change memory has high potential for next-generation nonvolatile memory technology. The effect of lower layer Sb2Te (ST) on the crystallization process of Ge2Sb2Te5 (GST) is investigated by observing the change of the microstructure. Compared t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2be664665ab5dd94a8992719e20429cf
https://doi.org/10.1063/1.5100840
https://doi.org/10.1063/1.5100840