Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Wangyong Chen"'
Autor:
Jiahui Chen, Wangyong Chen, Linlin Cai, Haifeng Chen, Pengling Yang, Dahui Wang, Manling Shen, Xiangyang Li, Hui Qiao
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 4, Pp 1-8 (2024)
In recent years, there has been a growing interest in photovoltaic detectors based on mercury cadmium telluride (Hg1-xCdxTe), owing to their exceptional photoelectric properties. To provide the physical insights into the modulation effects of Cd comp
Externí odkaz:
https://doaj.org/article/8432b21e03ff405d86a3efe36d68b8c3
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 303-310 (2023)
Process variations (PV), including global variation (GV) and local variation (LV), have become one of the major issues in advanced technologies, which is crucial for circuit performance and yield. However, developing a mature and physics-based model
Externí odkaz:
https://doaj.org/article/f521b6838a3c44e29d9bc4875b3c1969
Publikováno v:
IEEE Transactions on Electron Devices. 70:864-870
Publikováno v:
IEEE Transactions on Electron Devices. 69:2573-2578
Publikováno v:
Transportation Research Record: Journal of the Transportation Research Board. 2676:187-201
Near stationary traffic states are of great significance for the calibration of the fundamental diagram and the quantification of capacity variation. In this paper, based on wavelet transform and robust functional pruning optimal partitioning (RFPOP)
Publikováno v:
IEEE Transactions on Electron Devices. 69:11-16
Publikováno v:
IEEE Electron Device Letters. 42:792-795
In this letter, a new method based on the temperature dependence of gate leakage current for accurately characterizing thermal crosstalk is proposed and performed on the advanced silicon-on-insulator (SOI) MOSFETs. The developed technique enables to
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Publikováno v:
IEEE Transactions on Electron Devices. 67:4573-4577
Independent back bias in the ultrathin body and Box (UTBB) fully depleted silicon-on-insulator (FDSOI) serves as the critical knob for exploiting the performance and power tradeoffs and process/aging compensation. The effectiveness of back bias is on
Publikováno v:
IEEE Transactions on Electron Devices. 67:1919-1923
This article presents an evaluation of the photoelectric characteristic of different structured ultrathin body and buried oxide (UTBB) MOSFETs. The UTBB MOSFETs can achieve photoelectric conversion by integrating a doped well or photodiode beneath th