Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Wangran Wu"'
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045031-045031-5 (2021)
In this paper, a single particle irradiation experiment is performed on the 600 V trench insulated gate bipolar transistor for the first time. The experimental results show that, at the collector voltages of 100 V and 300 V, single event gate rupture
Externí odkaz:
https://doaj.org/article/0de3a7b264884c35ad3ffe0fe14e45f8
Autor:
Guangan Yang, Hao Tian, Zuoxu Yu, Tingrui Huang, Yong Xu, Huabin Sun, Weifeng Sun, Wangran Wu
Publikováno v:
IEEE Electron Device Letters. 43:1898-1901
Autor:
Guangan Yang, Zuoxu Yu, Hao Tian, Tingrui Huang, Yong Xu, Huabin Sun, Weifeng Sun, Wangran Wu
Publikováno v:
IEEE Transactions on Electron Devices. 69:5556-5561
Autor:
Guangan Yang, Hao Tian, Zuoxu Yu, Tingrui Huang, Yong Xu, Huabin Sun, Weifeng Sun, Wangran Wu
Publikováno v:
IEEE Transactions on Electron Devices. 69:3732-3736
Publikováno v:
IEEE Transactions on Electron Devices. 69:1191-1195
Publikováno v:
IEEE Transactions on Power Electronics. 37:55-58
In this letter, we comprehensively investigate the electrical properties of the 1200 V planner-gate 4H-SiC power metal–oxide–semiconductor field-effect transistors under the mechanical strains. Three kinds of strains, including the biaxial strain
Publikováno v:
IEEE Transactions on Electron Devices. 68:4462-4466
In this work, a high-voltage amorphous In-Ga-Zn-O (a-IGZO) thin-film-transistors (TFTs) with the stair gate-dielectric at the drain side were demonstrated. The electrical properties of the proposed TFTs were comprehensively investigated. The breakdow
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Autor:
Siyang Liu, Weifeng Sun, Guipeng Sun, Chaoqi Xu, Ruibin Cao, Feng Lin, Shuxian Chen, Geng Helong, Wangran Wu
Publikováno v:
IEEE Transactions on Electron Devices. 68:421-424
In this brief, the contact etch stop layer (CESL) stressor is introduced to improve the performance of n-type lateral double-diffused MOSFET (nLDMOSFET) with various operating voltages. Three groups of nLDMOSFETs were studied to demonstrate the effec