Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Wanghua Hu"'
Publikováno v:
Zeitschrift für Kristallographie - New Crystal Structures, Vol 239, Iss 3, Pp 573-574 (2024)
C7H10N2O3, monoclinic, Cc (no. 9), a = 8.8611(4) Å, b = 13.8991(7) Å, c = 7.7194(5) Å, β = 124.527(1)°, V = 783.27(7) Å3, Z = 4, R gt(F) = 0.0493, wR ref(F 2) = 0.1257, T = 170 K.
Externí odkaz:
https://doaj.org/article/bf0f5796b3cc41beb0148d85bb79ec5f
Publikováno v:
npj Quantum Materials, Vol 8, Iss 1, Pp 1-6 (2023)
Abstract The coexistence of electric dipoles and itinerant electrons in a solid was postulated decades ago, before being experimentally established in several ‘polar metals’ during the last decade. Here, we report a concentration-driven polar-to-
Externí odkaz:
https://doaj.org/article/7d3de03ddc184a748ea8137e37e6301b
Publikováno v:
Materials, Vol 16, Iss 12, p 4329 (2023)
The multiple anion superlattice Bi4O4SeCl2 has been reported to exhibit extremely low thermal conductivity along the stacking c-axis, making it a promising material for thermoelectric applications. In this study, we investigate the thermoelectric pro
Externí odkaz:
https://doaj.org/article/b205b04748da4d17b759dccbad381c34
Autor:
Jialu Wang, Jing Wu, Tao Wang, Zhuokai Xu, Jifeng Wu, Wanghua Hu, Zhi Ren, Shi Liu, Kamran Behnia, Xiao Lin
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
The electrical resistivity of Fermi liquids usually shows square power law with respect to temperature (T 2) due to either inter-bandscattering or Umklapp process. Here, authors report T 2 resitivity below a temperature where neither Umkapp nor inter
Externí odkaz:
https://doaj.org/article/f1c7075b78b54eb184da8efd474d1363
Autor:
Tao Wang, Zhuokai Xu, Ziye Zhu, Mengqi Wu, Zhefeng Lou, Jialu Wang, Wanghua Hu, Xiaohui Yang, Tulai Sun, Xiaorui Zheng, Wenbin Li, Xiao Lin
Publikováno v:
Nano Research. 16:3224-3230
Publikováno v:
Zeitschrift für Kristallographie - New Crystal Structures, Vol 234, Iss 6, Pp 1219-1220 (2019)
C3H1.24Cl0.76N4O4, monoclinic, P21/c (no. 14), a = 11.3953(11) Å, b = 5.9373(4) Å, c = 9.7498(9) Å, β = 96.630(4)°, V = 655.23(10) Å3, Z = 4, Rgt(F) = 0.0446, wRref(F2) = 0.1068, T = 173(2) K.
Externí odkaz:
https://doaj.org/article/3bc7058feeed42c495d10c5107351dd1
Publikováno v:
Zeitschrift für Kristallographie / New Crystal Structures; Jun2024, Vol. 239 Issue 3, p573-574, 2p
Autor:
Zhi Ren, Tao Wang, Ryotaro Arita, Zhu-An Xu, Chao Zhang, Xiaohui Yang, Chenchao Xu, Wanghua Hu, Xiao Lin, Jialu Wang, Tonghua Yu, Zhuokai Xu, Motoaki Hirayama
Publikováno v:
Physical Review B. 104
Topological crystalline metals and semimetals (TCMs) have stimulated great research interest, which broadens the classification of topological phases and provides a valuable platform to explore topological superconductivity. Here, we report the disco
Bi$_2$O$_2$Se is a promising material for next-generation semiconducting electronics. It exhibits premature metallicity on the introduction of a tiny amount of electrons, the physics behind which remains elusive. Here we report on transport and diele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::514822c1e6f4d5136bd72fee557722fd
http://arxiv.org/abs/2102.11451
http://arxiv.org/abs/2102.11451
Publikováno v:
Applied Physics Letters. 119:081901
Bismuth oxyselenide (Bi$_2$O$_2$Se) attracts great interest as a potential n-type complement to p-type thermoelectric oxides in practical applications. Previous investigations were generally focused on polycrystals. Here, we performed a study on the