Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Wang-Yi Lee"'
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
In this study, a Vertical Via RRAM fully compatible to cutting-edge FinFET CMOS logic process has been demonstrated. These Vertical Via RRAM devices are formed by the stacked nanometer via and metal in the Cu BEOL CMOS logic process. Between the two