Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Wang Yin-Yue"'
Publikováno v:
In International Journal of Biological Macromolecules October 2024 278 Part 3
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
In Journal of Integrative Agriculture July 2016 15(7):1449-1457
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Chinese Physics B. 17:3021-3025
This paper reports that by using the hydrofluoric acid (HF) as the acid catalyst, F doped nanoporous low-k SiO2 thin films have been prepared by means of sol-gel method. The characterization of atomic force microscopy and Fourier transform infrared s
Publikováno v:
Frontiers of Materials Science in China. 1:88-91
Zinc oxide (ZnO) thin films were deposited on (100) Si substrates by sol-gel technique. Zinc acetate was used as the precursor material. The effect of different annealing atmospheres and annealing temperatures on composition, structural and optical p
Publikováno v:
Chinese Physics. 13:1330-1333
Tb-doped Zinc oxide (ZnO:Tb) films were prepared by RF reactive magnetron sputtering of a Zn target with some Tb-chips attached. The results show that the appropriate Tb ions incorporated into ZnO films can improve the structural and electrical prope
Publikováno v:
Chinese Physics Letters. 27:074205
Three-dimensional SiO2 photonic crystals (PhCs) are fabricated on quartz substrates by the vertical deposition method. Scanning electron microscopy measurement reveals that the samples exhibit an ordered close-packed arrangement of SiO2 spheres. It i
Publikováno v:
Chinese Physics Letters. 17:827-828
The as-deposited Au/Ti/p-diamond contacts prepared by rf sputtering are ohmic. The ohmic characteristics of the contacts are improved after annealing. As for the as-deposited and annealed contacts, the specific contact resistivities of 2.886 ? 10-3 a
Publikováno v:
Acta Physica Sinica. 58:8501
ZnO:Ni films with different doping concentrations (0—7at.%) have been deposited by radio frequency magnetron sputtering. The results of x-ray diffraction, including θ-2θ mode and rocking curve mode, indicate that the film doped with 5at.% Ni