Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Wang Xiantai"'
Publikováno v:
2013 International Workshop on Microwave and Millimeter Wave Circuits and System Technology.
A high power C-band monolithic voltage controlled oscillator (VCO) based on AlGaN/GaN HEMT is presented. The oscillator design utilizes a common-gate negative resistance structure, and a HEMT device acted as a varactor is used to control the VCO's os
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26e113837accda3b07574dc3d3b1996c
https://doi.org/10.1109/mmwcst.2013.6814551
https://doi.org/10.1109/mmwcst.2013.6814551
Publikováno v:
2011 IEEE International Symposium on Radio-Frequency Integration Technology.
88 nm-gate InP-based InAlAs/InGaAs HEMTs with the gate width of 75 μm have been designed and fabricated. They exhibited a current gain cutoff frequency (f T ) of 204 GHz and a maximum oscillation frequency (f max ) of 352 GHz at a drain-source volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3da0bcccc64c03a95ac44affdd63ba0c
https://doi.org/10.1109/rfit.2011.6141772
https://doi.org/10.1109/rfit.2011.6141772
Publikováno v:
Chinese Physics B. 22:128503
In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors (HEMTs) each with a gate-width of 2 × 50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c78a0652543830a2cde580f135290d3
https://doi.org/10.1088/1674-1056/22/12/128503
https://doi.org/10.1088/1674-1056/22/12/128503
Publikováno v:
Journal of Semiconductors. 33:074004
An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based high electron mobility transistor (HEMT) was successfully fabricated with a gate width of 2 × 50 μm and source-drain space of 2.4 μm. The T-gate was defined by electron beam lithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::293229a978142bd5c224a5a6db669ac6
https://doi.org/10.1088/1674-4926/33/7/074004
https://doi.org/10.1088/1674-4926/33/7/074004
Autor:
Su Yongbo, Xu Anhuai, Jin Zhi, Wang Xiantai, Cheng Wei, Ge Ji, Liu Xinyu, Qi Ming, Chen Gaopeng
Publikováno v:
Journal of Semiconductors. 32:035008
Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology's ability to implement high speed digital and integrated high performance mixed-signal circuits. We repo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::649c0c5ad4abb0af0c03834085c2d23e
https://doi.org/10.1088/1674-4926/32/3/035008
https://doi.org/10.1088/1674-4926/32/3/035008
Publikováno v:
Journal of Semiconductors. 31:094007
An InP/InGaAs single heterojunction bipolar transistor (SHBT) with high maximum oscillation frequency (fmax) and high cutoff frequency (ft) is reported. Efforts have been made to maximize fmax and ft simultaneously including optimizing the epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a7ed45e6d6f7c254931e0bf9b81168c
https://doi.org/10.1088/1674-4926/31/9/094007
https://doi.org/10.1088/1674-4926/31/9/094007
Publikováno v:
Journal of Semiconductors. 31:074012
A high power X-band hybrid microwave integrated voltage controlled oscillator (VCO) based on AlGaN/GaN HEMT is presented. The oscillator design utilizes a common-gate negative resistance structure with open and short-circuit stub microstrip lines as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c3b05ed0943382776db3e2280cfc05f
https://doi.org/10.1088/1674-4926/31/7/074012
https://doi.org/10.1088/1674-4926/31/7/074012
Publikováno v:
Journal of Semiconductors. 30:115001
A virtual loop model was built by the transmission analysis with virtual ground method to assist the negative-resistance oscillator design, providing more perspectives on output power and phase-noise optimization. In this work, the virtual loop descr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47aff4421d8cc0485b5fa2a08f98bb68
https://doi.org/10.1088/1674-4926/30/11/115001
https://doi.org/10.1088/1674-4926/30/11/115001
Publikováno v:
Chinese Physics Letters. 26:077302
We develop a physics-based charge-control InP double heterojunction bipolar transistor model including three important effects: current blocking, mobile-charge modulation of the base-collector capacitance and velocity-field modulation in the transit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b2e1e6e92e066f292261157849989c9
https://doi.org/10.1088/0256-307x/26/7/077302
https://doi.org/10.1088/0256-307x/26/7/077302
Publikováno v:
Journal of Semiconductors. 30:025005
A 6 GHz voltage controlled oscillator (VCO) optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance (Neg-R) method, utilizing an InGaP/GaAs hetero-junction bipolar transistor in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::125560bc4cea7563f39616e35271a38b
https://doi.org/10.1088/1674-4926/30/2/025005
https://doi.org/10.1088/1674-4926/30/2/025005