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pro vyhledávání: '"Wang Peng-Weio"'
Publikováno v:
Chinese Physics Letters. 25:1038-1041
Element doping is an important way to modify the properties of semiconductor materials. In our previous work, it was found that nitrogen-doping in β-Ga2O3 nanowires can induce a novel luminescence emission (around 740 nm) caused by generation of acc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ce2ce3436eb599af8ff994b93b66121
https://doi.org/10.1088/0256-307x/25/3/063
https://doi.org/10.1088/0256-307x/25/3/063
