Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Wang Hung-Shu"'
Autor:
Jywe, Wen Yuh, Chen, Shih Shin, Wang, Hung-Shu, Liu, Chien Hung, Jwo, Hsin Hung, Teng, Yun Feng, Hsieh, Tung Hsien
Publikováno v:
Proceedings of the International Conference on Intelligent Unmanned System (ICIUS 2007), Bali, Indonesia, October 24-25, 2007, Paper No. ICIUS2007-C002
For the tracking stage path planning, we design a two-axis cross-coupling control system which uses the PI controller to compensate the contour error between axes. In this paper, the stage adoptive is designed by our laboratory (Precision Machine Cen
Externí odkaz:
http://arxiv.org/abs/0804.4749
Autor:
Jywe, Wen-Yuh, Jeng, Yeau-Ren, Liu, Chien-Hung, Teng, Yun-Feng, Wu, Chia-Hung, Wang, Hung-Shu, Chen, Yi-Jou
Publikováno v:
In Precision Engineering 2008 32(4):239-250
Publikováno v:
IEEE Photonics Technology Letters. 15:1345-1347
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46d00b4027d248bbf1c5373ec0cdc2e6
https://doi.org/10.1109/lpt.2003.818064
https://doi.org/10.1109/lpt.2003.818064
Publikováno v:
IEEE Electron Device Letters. 24:619-621
A partially oxidized Al/sub 0.98/Ga/sub 0.02/As layer was introduced between the emitter and base of collector-up heterojunction bipolar transistors (C-up HBTs) to suppress the leakage current and improve the current gain. Dependence of device curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b9b2320f2c32d4a459f80650669600a
https://doi.org/10.1109/led.2003.817611
https://doi.org/10.1109/led.2003.817611
Publikováno v:
IEEE Photonics Technology Letters. 14:1491-1493
The optical output power of the AlInP-AlGaInP light-emitting diodes was pronouncedly enhanced 1.45 times at 20 mA without degrading the electrical characteristics by introducing the meshed GaAs contact layer. Both theoretical simulation and experimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::831e84a6fe26a8039f24dd38a5892955
https://doi.org/10.1109/lpt.2002.803369
https://doi.org/10.1109/lpt.2002.803369
Publikováno v:
IECON 2007 - 33rd Annual Conference of the IEEE Industrial Electronics Society.
In this paper, it was successfully developed a nano- measuring machine stage. It was used the features of a flexible structure to develop the nano-measuring machine stage. This stage includes two parts: one is a long range positioning X-Y stage and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4f6799b80ca63f84c3474849e0e9f87
https://doi.org/10.1109/iecon.2007.4460035
https://doi.org/10.1109/iecon.2007.4460035
Akademický článek
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Autor:
Rajcan-Separovic, Evica, Wang, Hung-Shu, Speevak, Marsha, Janes, Lynn, Korneluk, Robert, Wakasa, Kyo, Ikeda, Joh-E.
Publikováno v:
Human Genetics; 1995, Vol. 96 Issue 1, p39-43, 5p