Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Wang Fai Cheng"'
Autor:
Xu Wen Zhao, Hon Fai Wong, Yu Kuai Liu, Sheung Mei Ng, Min Gan, Lok Wing Wong, Jiong Zhao, Zongrong Wang, Wang Fai Cheng, Chuanwei Huang, Linfeng Fei, Chee Leung Mak, Chi Wah Leung
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 26, Pp n/a-n/a (2023)
Abstract Electric‐field regulation of magnetic properties in perovskite manganites has attracted much attention for its potential in spintronics. For antiferromagnetic perovskite manganites, fewer studies are reported due to technological difficult
Externí odkaz:
https://doaj.org/article/814d4b34f5a24e7285feac5d876dca09
Autor:
Siu Hong Choy, Kwok Lung Jim, Yuen Hong Tsang, Chi Wah Leung, Chee Leung Mak, Ming Tak Sze, Ka Lai Wong, Wang Fai Cheng
Publikováno v:
International Journal of Mobile Learning and Organisation. 18:1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbf99343d749e4af5f0c1374f58da3ec
https://doi.org/10.1504/ijmlo.2024.10055037
https://doi.org/10.1504/ijmlo.2024.10055037
Autor:
Ka Kin Lam, Sheung Mei Shamay Ng, Hon Fai Wong, Xu Wen Zhao, Yu Kuai Liu, Wang Fai Cheng, Chee Leung Mak, Jing Ming Liang, Chi Wah Leung
Publikováno v:
IEEE Transactions on Magnetics. 58:1-5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36ac68d9097fad41c7b9f85ed1d0facc
https://doi.org/10.1109/tmag.2021.3085364
https://doi.org/10.1109/tmag.2021.3085364
Autor:
Xu Wen Zhao, Sheung Mei Ng, Lok Wing Wong, Hon Fai Wong, Yu Kuai Liu, Wang Fai Cheng, Chee Leung Mak, Jiong Zhao, Chi Wah Leung
Publikováno v:
Applied Physics Letters. 121:162406
The magnetic ground state of LaMnO3 (LMO) thin film is still a controversial issue, even though various mechanisms, such as cation/anion non-stoichiometry, epitaxial strain, interfacial charge reconstruction, and orbital ordering, have been proposed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::032c1882c8e0676cf4e96bc670f0c96e
https://doi.org/10.1063/5.0106859
https://doi.org/10.1063/5.0106859
Autor:
Bernd Ploss, D. von Nordheim, Chi Wah Leung, Wang Fai Cheng, Hon Fai Wong, K. H. Chan, Chee Leung Mak, S.M. Ng, Yukuai Liu, Ka Kin Lam
Publikováno v:
IEEE Transactions on Magnetics. 54:1-4
Ionic liquid (IL) gating of functional oxides has drawn significant attention, since it can provide reversible changes in carrier concentration (~1014 cm $^{-2}$ ) at the interface, permitting the manipulation of electrical and magnetic properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2f3d3d52a13a989f00a7ab0a8aa554d
https://doi.org/10.1109/tmag.2018.2850067
https://doi.org/10.1109/tmag.2018.2850067
Publikováno v:
Solid-State Electronics. 138:62-65
Typical routes for fabricating MoS2-based electronic devices rely on the transfer of as-prepared flakes to target substrates, which is incompatible with conventional device fabrication methods. In this work we investigated the preparation of MoS2 fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50895883de4db01cb723aedd5849f4dc
https://doi.org/10.1016/j.sse.2017.07.009
https://doi.org/10.1016/j.sse.2017.07.009
Autor:
Wang Fai Cheng, Chee Leung Mak, Yukuai Liu, Sheung Mei Shamay Ng, Jiyan Dai, Bernd Ploss, Xinxin Chen, Chi Wah Leung, D. V. Nordheim, Hon Fai Wong
Publikováno v:
Solid-State Electronics. 138:56-61
We investigated the tunability of the transport and magnetic properties in 7.5 nm La 0.7 Sr 0.3 MnO 3 (LSMO) epitaxial films in a field effect geometry with the ferroelectric copolymer P(VDF-TrFE) as the gate insulator. Two different switching behavi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63a7de98fda5c375888b88ceaa23b9fb
https://doi.org/10.1016/j.sse.2017.07.008
https://doi.org/10.1016/j.sse.2017.07.008
Autor:
Xuwen Zhao, Hon Fai Wong, Wang Fai Cheng, Yu Kuai Liu, Sheung Mei Shamay Ng, Chee Leung Mak, Chi Wah Leung
Publikováno v:
Vacuum. 175:109280
Antiferromagnets have shown great potential for replacing ferromagnets in spintronics applications in recent years. In this work, antiferromagnetic La0.35Sr0.65MnO3 (AFM-LSMO) thin films were grown on ultrathin ferromagnetic La0.7Sr0.3MnO3 (FM-LSMO)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09a65b98eb6b35622e09128a06cc4e6d
https://doi.org/10.1016/j.vacuum.2020.109280
https://doi.org/10.1016/j.vacuum.2020.109280
Autor:
K. H. Chan, Yukuai Liu, Bernd Ploss, D. von Nordheim, Chi Wah Leung, S.M. Ng, Ka Kin Lam, Hon Fai Wong, Chee Leung Mak, Wang Fai Cheng
Publikováno v:
2018 IEEE International Magnetics Conference (INTERMAG).
Ionic liquid (IL) gating on functional oxide has drawn significant attention, since it can provide reversible changes in carrier concentration $(\sim 10 ^{14}$ cm-3 at the interface, permitting the manipulation of electrical and magnetic properties v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b77e6ea5f05a479125500764a43668
https://doi.org/10.1109/intmag.2018.8508168
https://doi.org/10.1109/intmag.2018.8508168
Publikováno v:
2017 IEEE International Magnetics Conference (INTERMAG).
The prospects of spintronic devices based on 2-D materials originate from their outstanding spin-related properties. Fabrication of such devices typically involves transfer processes that yield inferior interfaces due to trapped contaminants or cavit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a74ffcb4f31a1a45c968f40177a7fe1
https://doi.org/10.1109/intmag.2017.8007578
https://doi.org/10.1109/intmag.2017.8007578