Výsledky vyhledávání - "Wang, Wei Gang"

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Hardware in Loop Learning with Spin Stochastic Neurons

Autor: Islam, A N M Nafiul, Yang, Kezhou, Shukla, Amit K., Khanal, Pravin, Zhou, Bowei, Wang, Wei-Gang, Sengupta, Abhronil

Despite the promise of superior efficiency and scalability, real-world deployment of emerging nanoelectronic platforms for brain-inspired computing have been limited thus far, primarily because of inter-device variations and intrinsic non-idealities.

Externí odkaz: http://arxiv.org/abs/2305.03235

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Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl

Autor: Habiboglu, Ali, Chandak, Yash, Khanal, Pravin, Zhou, Bowei, Eckel, Carter, Warrilow, Jacob Cutshall Kennedy, O'Brien, John, Schaibley, John R., Leroy, Brian J., Wang, Wei-Gang

Publikováno v: J. Appl. Phys., 28 December 2023; 134 (24): 243904

Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small damping and fast switching. Here junctions with Co2FeAl as a ferromagnetic electrode are fabricated by room temperature sputtering on Si/SiO2 substra

Externí odkaz: http://arxiv.org/abs/2211.12448

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Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions

Autor: Khanal, Pravin, Zhou, Bowei, Almasi, Hamid, Habiboglu, Ali, Andrade, Magda, O'Brien, Jack, Enriquez, Arthur, Eckel, Carter, Mastrangelo, Christopher, Wang, Wei-Gang

The interfacial oxidation level and thermodynamic properties of the MgO-based perpendicular magnetic tunneling junctions are investigated. The symmetry-conserved tunneling effect depends sensitively on the MgO adatom energy during the RF sputtering,

Externí odkaz: http://arxiv.org/abs/2210.16734

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Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers

Autor: Zhou, Bowei, Khanal, Pravin, Benally, Onri Jay, Lyu, Deyuan, Gopman, Daniel B., Enriquez, Arthur, Habiboglu, Ali, Warrilow, Kennedy, Wang, Jian-Ping, Wang, Wei-Gang

Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver unique function

Externí odkaz: http://arxiv.org/abs/2210.14969

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Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier

Autor: Khanal, Pravin, Zhou, Bowei, Andrade, Magda, Mastrangelo, Christopher, Habiboglu, Ali, Enriquez, Arthur, Fox, Daulton, Warrilow, Kennedy, Wang, Wei-Gang

Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in MgAl2O4-based juncti

Externí odkaz: http://arxiv.org/abs/2208.09947

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