Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Wang, Jiang‐Jing"'
Autor:
Tan, Jieling, Wang, Jiang-Jing, Zhang, Hang-Ming, Zhang, Han-Yi, Li, Heming, Wang, Yu, Zhou, Yuxing, Deringer, Volker L., Zhang, Wei
Main-group layered binary semiconductors, in particular, the III-VI alloys in the binary Ga-Te system are attracting increasing interest for a range of practical applications. The III-VI semiconductor, monoclinic gallium monotelluride (m-GaTe), has b
Externí odkaz:
http://arxiv.org/abs/2401.03731
Autor:
Wang, Xiaozhe, Sun, Suyang, Wang, Jiang-Jing, Li, Shuang, Zhou, Jian, Aktas, Oktay, Xu, Ming, Deringer, Volker L., Mazzarello, Riccardo, Ma, En, Zhang, Wei
The layered crystal structure of Cr2Ge2Te6 shows ferromagnetic ordering at the two-dimensional limit, which holds promise for spintronic applications. However, external voltage pulses can trigger amorphization of the material in nanoscale electronic
Externí odkaz:
http://arxiv.org/abs/2301.02974
Autor:
Wang, Xu-Dong, Tan, Jieling, Ouyang, Jian, Zhang, Hangming, Wang, Jiang-Jing, Wang, Yuecun, Deringer, Volker L., Zhou, Jian, Zhang, Wei, Ma, En
While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore
Externí odkaz:
http://arxiv.org/abs/2207.02670
Autor:
Jiang, Ting-Ting, Wang, Xu-Dong, Wang, Jiang-Jing, Zhang, Han-Yi, Lu, Lu, Jia, Chunlin, Wuttig, Matthias, Mazzarello, Riccardo, Zhang, Wei, Ma, En
Tailoring the degree of structural disorder in Ge-Sb-Te alloys is important for the development of non-volatile phase-change memory and neuro-inspired computing. Upon crystallization from the amorphous phase, these alloys form a cubic rocksalt-like s
Externí odkaz:
http://arxiv.org/abs/2203.09310
Autor:
Jiang, Ting-Ting, Wang, Xu-Dong, Wang, Jiang-Jing, Zhang, Han-Yi, Lu, Lu, Jia, Chunlin, Wuttig, Matthias, Mazzarello, Riccardo, Zhang, Wei, Ma, En
Publikováno v:
In Fundamental Research September 2024 4(5):1235-1242
Non-volatile tunable optics by design: From chalcogenide phase-change materials to device structures
Autor:
Wang, Danian, Zhao, Lin, Yu, Siyu, Shen, Xueyang, Wang, Jiang-Jing, Hu, Chaoquan, Zhou, Wen, Zhang, Wei
Publikováno v:
In Materials Today September 2023 68:334-355
Autor:
Jiang, Ting-Ting, Wang, Jiang-Jing, Lu, Lu, Ma, Chuan-Sheng, Zhang, Dan-Li, Rao, Feng, Jia, Chun-Lin, Zhang, Wei
Publikováno v:
APL Mater.7,081121(2019)
Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests, but also make PCMs based random access memory (PRAM) a leading candidate for non-volatile m
Externí odkaz:
http://arxiv.org/abs/1904.10601
Akademický článek
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Autor:
Wang, Jiang-Jing, Sun, Suyang, Lu, Lu, Du, Hongchu, Jia, Chun-Lin, Cojocaru-Mirédin, Oana, Yang, Jian, Liu, Guiwu, Zhou, Chongjian, Qiao, Guanjun, Shi, Zhongqi, Ma, En, Ge, Bangzhi, Yu, Yuan, Wuttig, Matthias, Zhang, Wei
Publikováno v:
In Nano Energy 15 December 2022 104 Part A
Autor:
Jiang, Ting-Ting, Wang, Xu-Dong, Wang, Jiang-Jing, Zhou, Yu-Xing, Zhang, Dan-Li, Lu, Lu, Jia, Chun-Lin, Wuttig, Matthias, Mazzarello, Riccardo, Zhang, Wei
Publikováno v:
In Acta Materialia 1 April 2020 187:103-111