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pro vyhledávání: '"Wang, Caiyu"'
Autor:
Wang, Caiyun.
Publikováno v:
Access electronically.
Thesis (Ph.D.)--University of Wollongong, 2003.
Typescript. Includes bibliographical references: leaf 151-160.
Typescript. Includes bibliographical references: leaf 151-160.
Autor:
Li, Chenglin, Chen, Qianglong, Li, Liangyue, Wang, Caiyu, Li, Yicheng, Chen, Zulong, Zhang, Yin
While large language models (LLMs) have demonstrated exceptional performance in recent natural language processing (NLP) tasks, their deployment poses substantial challenges due to high computational and memory demands in real-world applications. Rec
Externí odkaz:
http://arxiv.org/abs/2312.10730
Autor:
Wang, Caiyun
Publikováno v:
University of Wollongong Thesis Collection.
The properties of nickel hydroxide, in particular ?-phase nickel hydroxide and spherical nickel hydroxide, were studied. ?-phase nickel hydroxide was prepared by an improved chemical co-precipitation method, while a spray drying technique was employe
Externí odkaz:
http://ro.uow.edu.au/theses/192
Autor:
Wei, Xinyi, Chu, Xiaoyuan, Geng, Jingyu, Wang, Yuhui, Wang, Pengcheng, Wang, HongXia, Wang, Caiyu, Lei, Li
Publikováno v:
In Technology in Society June 2024 77
Autor:
Li, Wenguang, Shi, Fan, Yi, Shusheng, Feng, Tianyu, Wang, Caiyu, Li, Ziyan, Zheng, Wei, Zhai, Bingnian
Publikováno v:
In European Journal of Agronomy February 2024 153
Autor:
Xia, Zhanbo, Chandrasekar, Hareesh, Moore, Wyatt, Wang, Caiyu, Lee, Aidan, McGlone, Joe, Kalarickal, Nidhin Kurian, Arehart, Aaron, Ringel, Steven, Yang, Fengyuan, Rajan, Siddharth
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materi
Externí odkaz:
http://arxiv.org/abs/1911.02068
Autor:
Razzak, Towhidur, Chandrasekar, Hareesh, Hussain, Kamal, Lee, Choong Hee, Mamun, Abdullah, Xue, Hao, Xia, Zhanbo, Sohel, Shahadat H., Rahman, Mohammad Wahidur, Bajaj, Sanyam, Wang, Caiyu, Lu, Wu, Khan, Asif, Rajan, Siddharth
In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extreme dielectric constant material, has been used, in this study, as diele
Externí odkaz:
http://arxiv.org/abs/1910.02303
Akademický článek
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Publikováno v:
Deviant Behavior; Nov2024, Vol. 45 Issue 11, p1627-1639, 13p
Publikováno v:
In Journal of Biomedical Informatics November 2020 111