Zobrazeno 1 - 10
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pro vyhledávání: '"Wang, Boyan"'
Autor:
Wang, Boyan
Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this ultra-wide bandgap is the high-temperature sta
Externí odkaz:
https://hdl.handle.net/10919/118116
Large Language Models (LLMs) are becoming increasingly powerful and capable of handling complex tasks, e.g., building single agents and multi-agent systems. Compared to single agents, multi-agent systems have higher requirements for the collaboration
Externí odkaz:
http://arxiv.org/abs/2408.15971
Autor:
Shen, Kang, Liu, Xuxiong, Wang, Boyan, Yao, Jun, Liu, Xin, Guan, Yujie, Wang, Yu, Li, Gengchen, Sun, Xiao
In this paper, we present our approach to addressing the challenges of the 7th ABAW competition. The competition comprises three sub-challenges: Valence Arousal (VA) estimation, Expression (Expr) classification, and Action Unit (AU) detection. To tac
Externí odkaz:
http://arxiv.org/abs/2407.12258
Autor:
Liu, Xuxiong, Shen, Kang, Yao, Jun, Wang, Boyan, Liu, Minrui, An, Liuwei, Cui, Zishun, Feng, Weijie, Sun, Xiao
Compound Expression Recognition (CER) is vital for effective interpersonal interactions. Human emotional expressions are inherently complex due to the presence of compound expressions, requiring the consideration of both local and global facial cues
Externí odkaz:
http://arxiv.org/abs/2407.12257
Autor:
Chen, Bo, Cheng, Xingyi, Li, Pan, Geng, Yangli-ao, Gong, Jing, Li, Shen, Bei, Zhilei, Tan, Xu, Wang, Boyan, Zeng, Xin, Liu, Chiming, Zeng, Aohan, Dong, Yuxiao, Tang, Jie, Song, Le
Protein language models have shown remarkable success in learning biological information from protein sequences. However, most existing models are limited by either autoencoding or autoregressive pre-training objectives, which makes them struggle to
Externí odkaz:
http://arxiv.org/abs/2401.06199
Autor:
Wang, Boyan
Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is higher than the bandgap of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this wide-bandgap is the high critical elect
Externí odkaz:
http://hdl.handle.net/10919/110757
Publikováno v:
In Desalination and Water Treatment October 2024 320
Autor:
Xiao, Qingchen, Wang, Boyan, Li, Zishan, Zhang, Zihua, Xie, Kailing, Zhou, Jing, Lin, Keqing, Geng, Xiaowan, Li, Xiaoyu, Chen, Jin
Publikováno v:
In Resources, Environment and Sustainability September 2024 17
Publikováno v:
In Computerized Medical Imaging and Graphics September 2024 116
Autor:
Cui, Ye, Xiao, Qingchen, Wang, Boyan, Li, Zishan, Zhai, Yuxin, Xie, Kailin, Cao, Gaoxue, Li, Xiaoyu, Chen, Jin
Publikováno v:
In Rhizosphere September 2024 31