Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Wandong Kim"'
Publikováno v:
2022 International Conference on Electronics, Information, and Communication (ICEIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a68921353e9aa33e213eb7037dd6361b
https://doi.org/10.1109/iceic54506.2022.9748545
https://doi.org/10.1109/iceic54506.2022.9748545
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:3386-3389
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eb0a3394af1cd251e1d9e7b03561471
https://doi.org/10.1166/jnn.2017.14043
https://doi.org/10.1166/jnn.2017.14043
Autor:
Junil Lee, Jong-Ho Lee, Hyun Woo Kim, Wandong Kim, Sangwan Kim, Jang Hyun Kim, Byung-Gook Park, Daewoong Kwon, Euyhwan Park
Publikováno v:
IEEE Transactions on Electron Devices. 64:1799-1805
In order to verify the effects of localized body doping (LBD) on alternating current switching performances of tunnel FETs (TFETs) with vertical structures, The TFET inverter composed of n-/p-type TFET with the localized p+/n+ body doping is simulate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed2bcca189f05ed4df8c7964fe80b66b
https://doi.org/10.1109/ted.2017.2669365
https://doi.org/10.1109/ted.2017.2669365
Autor:
Jaedoeg Yu, Kyung-Tae Kang, Jin-Yup Lee, Hyung-Gon Kim, Doo-Sub Lee, Jeong-Don Ihm, Young-Sun Min, An-Soo Park, Chulbum Kim, Jinho Ryu, Dongku Kang, Pansuk Kwak, Doohyun Kim, Kyung-Min Kang, Sung-Yeon Lee, Yong Sung Cho, Moosung Kim, Wandong Kim, Lee Han-Jun, Cheon An Lee, In-Mo Kim, Bong-Kil Jung, Woopyo Jeong, Jae-Ick Son, Nayoung Choi, Ki-Tae Park, Kye-Hyun Kyung, Dae-Seok Byeon, Dong-Su Jang
Publikováno v:
IEEE Journal of Solid-State Circuits. 52:210-217
A 48 WL stacked 256-Gb V-NAND flash memory with a 3 b MLC technology is presented. Several vertical scale-down effects such as deteriorated WL loading and variations are discussed. To enhance performance, reverse read scheme and variable-pulse scheme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::137844fab145a5a3c940f99d0661c310
https://doi.org/10.1109/jssc.2016.2604297
https://doi.org/10.1109/jssc.2016.2604297
Autor:
Daewoong Kwon, Joo Yun Seo, Byung-Gook Park, Sang-Ho Lee, Sung-Kye Park, Gyu Seong Cho, Wandong Kim, Se Hwan Park, Do-Bin Kim
Publikováno v:
IEEE Electron Device Letters. 37:1418-1421
In this letter, a channel-stacked array with tied bit-line (BL) and ground select transistor (GST) is proposed to access each layer independently without additional string select transistors (SSTs) to a conventional planar NAND array. The proposed st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::323474506be76eed78f7afd9553625c1
https://doi.org/10.1109/led.2016.2611531
https://doi.org/10.1109/led.2016.2611531
Autor:
Jong-Ho Lee, Do-Bin Kim, Eun-Seok Choi, Gyu Seog Cho, Sung-Kye Park, Joo Yun Seo, Sang-Ho Lee, Byung-Gook Park, Wandong Kim, Daewoong Kwon
Publikováno v:
IEEE Transactions on Electron Devices. 63:3521-3526
In this paper, we propose new string select transistors (SSTs)/dummy SSTs (DSSTs) threshold voltage ( $V_{\mathrm{ th}}$ ) setting methods in simplified channel-stacked array with layer selection by multilevel operation (SLSM). In these methods, SSTs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::997316dc5d044c011a0de4c77d6a2a9b
https://doi.org/10.1109/ted.2016.2593909
https://doi.org/10.1109/ted.2016.2593909
Autor:
Jong-Ho Lee, Jinkyu Kang, Joo Yun Seo, Wandong Kim, Sung-Bok Lee, Daewoong Kwon, Byung-Gook Park, Myung Hyun Baek, Woojae Jang, Sang-Ho Lee
Publikováno v:
IEEE Electron Device Letters. 37:866-869
In this letter, we propose a layer selection method by permutations (LSMPs) of string select line (SSL) bias and string select transistor with multi-level states. Due to the increased number of threshold voltage orderings by the permutation, the numb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9e38656fd19f4cfc45ea73f0a51f7b1
https://doi.org/10.1109/led.2016.2568171
https://doi.org/10.1109/led.2016.2568171
Publikováno v:
IEEE Transactions on Electron Devices. 63:2398-2404
A comprehensive study was done regarding stability under simultaneous stress of light and negative gate dc bias in amorphous hafnium–indium–zinc-oxide ( $\alpha $ -HIZO) thin-film transistors. A negative threshold voltage ( $V_{\mathrm{ th}})$ sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15884569d82a825f87d31df083713db1
https://doi.org/10.1109/ted.2016.2555332
https://doi.org/10.1109/ted.2016.2555332
Autor:
Jong-Ho Lee, Sang-Ho Lee, Wandong Kim, Daewoong Kwon, Gyu Seong Cho, Do-Bin Kim, Eun-Seok Choi, Ji-Ho Park, Joo Yun Seo, Sung-Kye Park, Myung-Hyun Baek, Byung-Gook Park
Publikováno v:
IEEE Transactions on Electron Devices. 63:1041-1046
Program disturbance is analyzed in a simplified channel-stacked array with layer selection by multilevel operation after setting the threshold voltages ( $V_{\textrm {th}}$ ) of string select transistors (SSTs)/dummy SSTs. There are additional unsele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ada5171fa87ae9d4aee193aa1b940f03
https://doi.org/10.1109/ted.2016.2517336
https://doi.org/10.1109/ted.2016.2517336
Autor:
Jang-Gn Yun, Seongjae Cho, Jong-Ho Lee, Il Han Park, Gil Sung Lee, Won-Bo Shim, Wandong Kim, Se Hwan Park, Junghoon Lee, Yoon Kim, Doo-Hyun Kim, Byung-Gook Park, Dong Hua Li, Hyungcheol Shin
Publikováno v:
Nanoscience and Nanotechnology Letters. 7:594-598
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f14080378426faf701d3414987866125
https://doi.org/10.1166/nnl.2015.2002
https://doi.org/10.1166/nnl.2015.2002