Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Wandong Gao"'
Publikováno v:
IEEE Access, Vol 10, Pp 132448-132454 (2022)
In recent years, with the rapid growth of the digital currency industry, blockchain technology has attracted wide attention, and its research mostly focuses on the protection of economic security and privacy. In order to study the application and dev
Externí odkaz:
https://doaj.org/article/511473341ea84915af63c81231f9a834
Autor:
Wandong Gao, Guang Yang, Yixiao Qian, Xuefeng Han, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang
Publikováno v:
Frontiers in Materials, Vol 10 (2023)
Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage current of 4H-SiC based high-power devices is a long-standing issue in the development of 4H-SiC homoepitaxy. In this work, we compare the effect of different
Externí odkaz:
https://doaj.org/article/fbd6db8d194740b7b748dd13e9c2a2cb
Autor:
Vijayshankar Asokan, Dancheng Zhu, Wei Huang, Hulian Wang, Wandong Gao, Ze Zhang, Chuanhong Jin
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
Abstract In the present study, a novel method has been carried out to grow tungsten (W) doped molybdenum disulfide (MoS2) on the graphene transferred TEM grid in a chemical vapor deposition (CVD) setup. Tungsten trioxide (WO3) has been used as a sour
Externí odkaz:
https://doaj.org/article/50f7347dfd154ee9b81dd15fadbc5c67
Autor:
Wei Huang, Chuanhong Jin, Ze Zhang, Vijayshankar Asokan, Dancheng Zhu, Wandong Gao, Hulian Wang
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
Scientific Reports
Scientific Reports
In the present study, a novel method has been carried out to grow tungsten (W) doped molybdenum disulfide (MoS2) on the graphene transferred TEM grid in a chemical vapor deposition (CVD) setup. Tungsten trioxide (WO3) has been used as a source for