Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Wan-Sin Chen"'
Autor:
Chiu-Ping Cheng, Wan-Sin Chen, Yi-Ting Cheng, Hsien-Wen Wan, Cheng-Yeh Yang, Tun-Wen Pi, Jueinai Kwo, Minghwei Hong
Publikováno v:
ACS Omega, Vol 3, Iss 2, Pp 2111-2118 (2018)
Externí odkaz:
https://doaj.org/article/39ec327e5b934ca59abf14fdad78b00c
Autor:
Wan-Sin Chen, Yi-Ting Cheng, Hsien-Wen Wan, Cheng-Yeh Yang, Chiu-Ping Cheng, J. Kwo, Tun-Wen Pi, Minghwei Hong
Publikováno v:
ACS Omega, Vol 3, Iss 2, Pp 2111-2118 (2018)
Y2O3 was in situ deposited on a freshly grown molecular beam epitaxy GaAs(001)-4 × 6 surface by atomic layer deposition (ALD). In situ synchrotron radiation photoemission was used to study the mechanism of the tris(ethylcyclopentadienyl)yttrium [Y(C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67037e8e400c952fde2bceeff4095f07
https://doi.org/10.1021/acsomega.7b01564
https://doi.org/10.1021/acsomega.7b01564
Autor:
Yi-Ting Cheng, Minghwei Hong, Raymond T. Tung, Guo-Jhen Wei, Yen-Hsun Lin, Keng-Yung Lin, Wan-Sin Chen, J. Kwo, Hsien-Wen Wan, Chiu-Ping Cheng, Tun-Wen Pi
Publikováno v:
Applied Surface Science. 393:294-298
The Interface of Ag with p -type α2 GaAs(001)-2 × 4 has been studied to further understand the formation mechanism of the Schottky barrier height (SBH). In the initial phase of Ag deposition, high-resolution core-level data show that Ag adatoms eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6715f610244147b1e0029af962c9411e
https://doi.org/10.1016/j.apsusc.2016.10.027
https://doi.org/10.1016/j.apsusc.2016.10.027
Autor:
Chiu-Ping, Cheng, Wan-Sin, Chen, Yi-Ting, Cheng, Hsien-Wen, Wan, Cheng-Yeh, Yang, Tun-Wen, Pi, Jueinai, Kwo, Minghwei, Hong
Publikováno v:
ACS Omega
Y2O3 was in situ deposited on a freshly grown molecular beam epitaxy GaAs(001)-4 × 6 surface by atomic layer deposition (ALD). In situ synchrotron radiation photoemission was used to study the mechanism of the tris(ethylcyclopentadienyl)yttrium [Y(C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::13f0ce95b4bcb4f31bb09b508bd151b4
https://pubmed.ncbi.nlm.nih.gov/31458518
https://pubmed.ncbi.nlm.nih.gov/31458518
Autor:
Tun-Wen Pi, Hsien-Wen Wan, Wan-Sin Chen, Keng-Yung Lin, Chiu-Ping Cheng, Lawrence Boyu Young, Cheng-Yeh Yang, J. Kwo, Yi-Ting Cheng, Minghwei Hong
Publikováno v:
Journal of Physics D: Applied Physics. 51:405102
Using in situ synchrotron-radiation photoelectron spectroscopy, the band offsets and the surface dipole potential energy for cycle-by-cycle atomic layer deposited (ALD) Y2O3 on p-type GaAs(0 0 1)-4 × 6 were studied. We have characterized the electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::008cf0b570471766944ad396f6e4aaa0
https://doi.org/10.1088/1361-6463/aada5a
https://doi.org/10.1088/1361-6463/aada5a
Autor:
Hsien-Wen Wan, J. Kwo, Yi-Ting Cheng, Hung-Hsiang Cheng, Minghwei Hong, Keng-Yung Lin, Wan-Sin Chen, Chiu-Ping Cheng, Yen-Hsun Lin, Tun-Wen Pi
Publikováno v:
Applied Physics Express. 10:075701
Photoemission from an epi Ge(001)-2 × 1 surface is presented using synchrotron radiation as a probe. The topmost surface atoms are buckled with the up-dimer and down-dimer atoms exhibiting surface core-level shifts (SCLSs) of −0.492 and −0.178 e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5460a9458b80fb8e7801a35cf36c7f6
https://doi.org/10.7567/apex.10.075701
https://doi.org/10.7567/apex.10.075701
Autor:
Chiu-Ping Cheng, Wan-Sin Chen, Yi-Ting Cheng, Hsien-Wen Wan, Keng-Yung Lin, Lawrence Boyu Young, Cheng-Yeh Yang, Tun-Wen Pi, Jueinai Kwo, Minghwei Hong
Publikováno v:
Journal of Physics D: Applied Physics; 10/10/2018, Vol. 51 Issue 40, p1-1, 1p
Autor:
Yi-Ting Cheng, Yen-Hsun Lin, Wan-Sin Chen, Keng-Yung Lin, Hsien-Wen Wan, Chiu-Ping Cheng, Hung-Hsiang Cheng, Jueinai Kwo, Minghwei Hong, Tun-Wen Pi
Publikováno v:
Applied Physics Express; Jul2017, Vol. 10 Issue 7, p1-1, 1p