Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Wan-Siang Gan"'
Autor:
Pao-Hung Lin, Wei-Jhih Su, You-Li Wang, Yi-Ping Wang, Ying-Sheng Huang, Kuei-Yi Lee, Hung-Pin Hsu, Wan-Siang Gan, Shin-ichi Honda
Publikováno v:
Surface and Coatings Technology. 320:520-526
Tungsten-substituted molybdenum disulfide (Mo 1 − x W x S 2 ) shows excellent semiconductor properties related to the adjustable band gap structure. Mo 1 − x W x S 2 is an n-type semiconductor that has high carrier mobility, adjustable electrical
Autor:
Wan-Siang Gan, 顏萬祥
104
W(SxSe1-x)2 (0 < X < 1, Δx = 0.2 and x = 0.5) series of single crystal were gown by chemical vapor transport method (CVT) using iodine as a transport agent. Energy dispersive X-ray spectroscopy was employed to determine the contents of W(Sx
W(SxSe1-x)2 (0 < X < 1, Δx = 0.2 and x = 0.5) series of single crystal were gown by chemical vapor transport method (CVT) using iodine as a transport agent. Energy dispersive X-ray spectroscopy was employed to determine the contents of W(Sx
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/7vph9s
Autor:
Ruei-San Chen, Shin-ichi Honda, Ying-Sheng Huang, Wan-Siang Gan, You-Li Wang, Wei-Qian Weng, Wei-Jhih Su, Kuei-Yi Lee
Publikováno v:
Japanese Journal of Applied Physics. 56:032201
We investigated the photoconductive characteristics of tungsten-substituted molybdenum disulfide (Mo1− x W x S2) series materials synthesized by the chemical vapor transport (CVT) method using different x values of W composition (x = 0–1, Δx = 0
Autor:
Wei-Jhih Su, Wei-Qian Weng, You-Li Wang, Wan-Siang Gan, Shin-ichi Honda, Ruei-San Chen, Ying-Sheng Huang, Kuei-Yi Lee
Publikováno v:
Japanese Journal of Applied Physics; Mar2017, Vol. 56 Issue 3, p1-1, 1p