Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Wan-Jing Xu"'
Publikováno v:
Guoji Yanke Zazhi, Vol 23, Iss 12, Pp 1943-1949 (2023)
AIM:To investigate the effects and mechanisms of curcumin on apoptosis of retinal ganglion cells(RGCs)in chronic ocular hypertension rats.METHODS:A total of 21 Spraque-Dawley(SD)rats were randomly divided into 3 groups with 7 rats in each group. The
Externí odkaz:
https://doaj.org/article/b5fe772ab40e4ff18d13b0fa3e13ebb4
Autor:
Shuang Zhao, Xiang-Jie Fang, Juan-Mei Zhang, Jun Zhao, Wan-Jing Xu, Ling-Fang Zheng, Yi-Xuan Fu
Publikováno v:
Guoji Yanke Zazhi, Vol 23, Iss 8, Pp 1264-1268 (2023)
AIM: To examine the effects of salidroside on choroidal thickness, hypoxia-inducible factor-1α(HIF-1α), dopamine(DA)and its D1 receptor expression in guinea pigs with lens-induced myopia(LIM).METHODS: A total of 18 two-week-old guinea pigs were ran
Externí odkaz:
https://doaj.org/article/5bf4a62318ad4c5e83b90b7d893c5075
Publikováno v:
Guoji Yanke Zazhi, Vol 22, Iss 4, Pp 616-622 (2022)
AIM: To systematically evaluate the changes of hemodynamics, astigmatism and cytokines between travoprost and timolol in the treatment of primary open angle glaucoma(POAG)in Chinese adults.METHODS:Randomized controlled trials(RCTs)and cohort studies
Externí odkaz:
https://doaj.org/article/374d1600af9241c19942df31dd74c764
Publikováno v:
Guoji Yanke Zazhi, Vol 21, Iss 10, Pp 1751-1756 (2021)
AIM:To systematically compare and evaluate the clinical efficacy of intraocular lens(IOL)incarceration and non-incarceration in pediatric cataract.METHODS: Literatures were searched from domestic and foreign databases such as PubMed, Embase, Cochrane
Externí odkaz:
https://doaj.org/article/37ae04aaddf94fa5ac6566db09bc8eda
Publikováno v:
Thin Solid Films. 338:220-223
A new semiconductor III–V five-element alloy AlGaInPAs had been grown successfully by liquid phase epitaxy (LPE). All our samples had mirror-like, flat, surfaces. X-ray double crystal diffraction, PL spectra and Hall measurements show that all our
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f57094fdbed56e7759bd3175b58189b
https://doi.org/10.1016/s0040-6090(98)01091-8
https://doi.org/10.1016/s0040-6090(98)01091-8
Publikováno v:
Solid State Communications. 103:417-420
A set of equations for describing the solid-liquid equilibria for III–V quinary alloys based on the regular solution approximation was established. Some III–V quinary alloys have been grown by LPE and their compositions measured are in agreement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24f0fd1eec9ca6ca343b6885fb42fa84
https://doi.org/10.1016/s0038-1098(97)00208-1
https://doi.org/10.1016/s0038-1098(97)00208-1
Publikováno v:
Journal of Applied Physics. 80:6355-6359
A band offset diagram for the heterojunction InyGa1−yPzAs1−z/AlxGa1−xAs based on the transitivity rule and our measured band offset for In0.5Ga0.5P/GaAs is given. A carrier leakage analysis is developed and explains the experimental observation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef4f987401720badfa2fe05eb384a364
https://doi.org/10.1063/1.363654
https://doi.org/10.1063/1.363654
Publikováno v:
Solid State Communications. 92:419-422
The Hall effect and resistivity measurement over a wide temperature range of 1.5 to 300 K for undoped InGaP epitaxial layer grown on GaAs ( 100 ) substrate by liquid phase epitaxy are reported for the first time. The conduction behavior of InGaP at l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86baa8112d645a7a6ed88a36e4c4b5ec
https://doi.org/10.1016/0038-1098(94)90520-7
https://doi.org/10.1016/0038-1098(94)90520-7
Liquid phase epitaxy growth of Al x Ga y In 1-x-y P z As 1-z /GaAs with direct band gap up to 2.0 eV
Publikováno v:
Applied Physics A: Materials Science & Processing. 66:565-567
III-V pentenary semiconductor AlGaInPAs with a direct band gap of up to 2.0 eV has been grown successfully on GaAs substrates by liquid phase epitaxy;(LPE). With the introduction of the energy bowing parameters of quaternaries, the theoretical calcul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39be79a2163502e620a9be67c26d9415
https://doi.org/10.1007/s003390050714
https://doi.org/10.1007/s003390050714
Autor:
Shiliu Xu, Jingchun Li, Qi Yu, Kaizhou Tan, Xueliang Xu, Jing Zhang, Zhengfan Zhang, Guangbing Chen, Ding-lei Mei, Yukui Liu, Kaiquan He, Mohua Yang, Wan-jing Xu
Publikováno v:
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
A novel MBE-grown method using low-temperature (LT) Si technology is introduced into the fabrication of strained Si channel heterojunction PMOSFETs. This technology reduces thickness of relaxed Si1-xGex epitaxy layer from several micros using UHVCVD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bfb8e16e967789a2cb40db5c19082bd
https://doi.org/10.1109/icsict.2006.306126
https://doi.org/10.1109/icsict.2006.306126