Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Wan-Fang Chung"'
Autor:
Wan-Fang Chung, 鍾宛芳
95
In this thesis, we investigate the effects of cryogenic temperature and the main-Grain Boundary (main-GB) orientation in the channel region of N-type polycrystalline silicon thin film transistors (N-type poly-Si TFTs) fabricated by the Latera
In this thesis, we investigate the effects of cryogenic temperature and the main-Grain Boundary (main-GB) orientation in the channel region of N-type polycrystalline silicon thin film transistors (N-type poly-Si TFTs) fabricated by the Latera
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/42031222486212535693
Autor:
Hung Wei Li, Ya-Hsiang Tai, Chia-Sheng Lin, Ying-Chung Chen, Tseung-Yuen Tseng, Ting-Chang Chang, Kuan-Jen Tu, Wan-Fang Chung
Publikováno v:
Journal of The Electrochemical Society. 159:H286-H289
This paper investigates anomalous capacitance-voltage (C-V) degradation in amorphous indium-gallium-zinc-oxide (a-IGZO) thinfilm-transistors (TFTs) under hot carrier stress. In vacuum hot carrier stress, both the gate-to-drain capacitance (CGD) and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1123f1126441d58f8942cc9aa4b497e2
https://doi.org/10.1149/2.075203jes
https://doi.org/10.1149/2.075203jes
Autor:
Wan Fang Chung, Ting-Chang Chang, Yi Hsien Chen, Tseung-Yuen Tseng, Yu Chun Chen, Fon Shan Yeh, Hung Wei Li, Ya-Hsiang Tai, Shih Cheng Chen
Publikováno v:
Thin Solid Films. 520:1432-1436
This paper investigates the origin of the bias stability under ambient gas (oxygen, moisture and vacuum) of In–Ga–Zn–O thin film transistors with different annealing temperatures. In Zn-based TFTs, the electrical characteristic of device is a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8a06231ae7b791ec1ffd321765a0863
https://doi.org/10.1016/j.tsf.2011.09.033
https://doi.org/10.1016/j.tsf.2011.09.033
Publikováno v:
ECS Transactions. 41:265-271
This work shows the effects of post-deposition annealing atmosphere and duration on the properties of sol-gel derived amorphous indium zinc oxide thin film transistors (a-IZO TFTs). Two different post-deposition annealing atmospheres, nitrogen and ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be924dc6ca4406e64c4369e28b803b4c
https://doi.org/10.1149/1.3629975
https://doi.org/10.1149/1.3629975
Publikováno v:
ECS Solid State Letters. 2:Q72-Q74
aDepartment of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan bAdvanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan cDepartment of Photonics & Institute of Electro-Optical Engineering, National
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42432b1fa1bc3a4e41e7cb49814c6379
https://doi.org/10.1149/2.010309ssl
https://doi.org/10.1149/2.010309ssl
Publikováno v:
SID Symposium Digest of Technical Papers. 44:1037-1039
This study presents the influence of photo-thermal pre-treatment on the electrical characteristic and bias-induced instability of amorphous Zn-Sn-O thin film transistors. Even in the vacuum ambient, the passivation-free device with photo-thermal pre-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::381a6613d172d9e7f59b4891b0172806
https://doi.org/10.1002/j.2168-0159.2013.tb06400.x
https://doi.org/10.1002/j.2168-0159.2013.tb06400.x
Autor:
Wen-Jen Chiang, Tien-Yu Hsieh, Yu Chun Chen, Hung Wei Li, Yi-Hsien Chen, Wu-Wei Tsai, Jing-Yi Yan, Wan-Fang Chung, Ting-Chang Chang
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:Q74-Q76
aDepartment of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan bAdvanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan cDepartment of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung Un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f37ab40027595d2f16ab011c09abd23
https://doi.org/10.1149/2.028304jss
https://doi.org/10.1149/2.028304jss
Autor:
Chang Pei Wu, Hung Wei Li, Yu Chun Chen, Shih Ching Chen, Ya-Hsiang Tai, Wan Fang Chung, Ting-Chang Chang, Jin Lu, Yi Hsien Chen
Publikováno v:
Applied Physics Letters. 100:262908
This research presents a sol-gel derived zinc tin oxide thin film transistor (TFT) as a high-stability oxygen sensor. Due to its high sensitivity, oxygen has been traditionally regarded as having a negative influence on the electrical characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcf3cb38240aa787bbc7af2ffb413bc9
https://doi.org/10.1063/1.4731773
https://doi.org/10.1063/1.4731773
Publikováno v:
ECS Meeting Abstracts. :947-947
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::112bfe3d249070aa4ec489956f95a0be
https://doi.org/10.1149/ma2012-01/22/947
https://doi.org/10.1149/ma2012-01/22/947
Autor:
Yu Chun Chen, Ya-Hsiang Tai, Iue Hen Li, Ting-Chang Chang, Tseung-Yuen Tseng, Wan Fang Chung, Hung Wei Li
Publikováno v:
ECS Meeting Abstracts. :2113-2113
We have investigated the gate bias stress-induced instability on the electrical properties with different pre-treatments for sol-gel derived amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The device with illuminating and hea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::093686f45611810f0371fc18571fbea7
https://doi.org/10.1149/ma2011-02/31/2113
https://doi.org/10.1149/ma2011-02/31/2113