Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Wan-Chih Wang"'
Autor:
Wan-Chih Wang, 王萬智
101
In practice, vendors usually offer their buyers a permissible delay in payments. During the permissible delay period, there is no interest charge. Hence, buyers can earn the interest from sales revenue meanwhile vendors lose the interest ear
In practice, vendors usually offer their buyers a permissible delay in payments. During the permissible delay period, there is no interest charge. Hence, buyers can earn the interest from sales revenue meanwhile vendors lose the interest ear
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/88725397054931874886
Publikováno v:
European Journal of Operational Research. 296:940-952
The demand decreases as the price increases. Also, the demand rate for fresh goods depends on its freshness, which can be assessed by its sell-by date. Furthermore, a large pile of consumer goods displayed in a supermarket often provokes consumers to
Publikováno v:
Annals of Operations Research
Although research on pricing and lot-sizing decisions concerning payment types has been extensive, almost all of it has been done from the buyer’s perspective. In this study, we incorporate the following relevant and essential facts. If a seller al
Autor:
Florin Cerbu, Oreste Madia, Wan Chih Wang, Andre Stesmans, Valery V. Afanas'ev, Michel Houssa
Publikováno v:
ECS Transactions. 64:17-22
The work describes the physical principles of the exhaustive photodepopulation spectroscopy. This method allows one to determine the energy distribution of gap states in insulating materials using the observation of optically-assisted electron remova
Publikováno v:
European Journal of Operational Research. 232:315-321
Due to evaporation, obsolescence, spoilage, etc., some products (e.g., fruits, vegetables, pharmaceuticals, volatile liquids, and others) not only deteriorate continuously but also have their expiration dates. To attract new buyers and increase sales
Autor:
Kuo-Ren Lou, Wan-Chih Wang
Publikováno v:
Applied Mathematical Modelling. 37:4709-4716
Huang (2010) [1] proposed an integrated inventory model with trade credit financing in which the vendor decides its production lot size while the buyer determines its expenditure to minimize the annual integrated total cost for both the vendor and th
Autor:
M. K. Van Bael, Wan-Chih Wang, C. De Dobbelaere, An Hardy, S. Van Elshocht, D. Dewulf, Valery V. Afanas'ev, M. Badylevich, S. De Gendt
Publikováno v:
Journal of The Electrochemical Society. 159:G75-G79
[Dewulf, D.; Hardy, A.; De Dobbelaere, C.; Van Bael, M. K.] Hasselt Univ, Inorgan & Phys Chem IMO, B-3590 Diepenbeek, Belgium. [Dewulf, D.; Hardy, A.; Van Bael, M. K.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Van Elshocht, S.; De Gendt, S.]
Autor:
C. Baristiran Kaynak, Nicolas Menou, Andre Stesmans, M. Lukosius, Jorge A. Kittl, Valeri Afanas'ev, Ch. Wenger, K. Tomida, M. Badylevich, Mihaela Popovici, Wan-Chih Wang
Publikováno v:
Thin Solid Films. 519:5730-5733
To explore the possibility of bandgap engineering in Ti-oxide based insulators, we investigated the effect of added cations of another kind (Hf, Ta, Sr) on the optical absorption and photoconductivity of thin titanate films. A bandgap of 3.1–3.4 eV
Autor:
Wan Chih Wang, Mihaela Popovici, N. Jourdan, Augusto Redolfi, Christian Caillat, Johan Swerts, Christina Olk, Valeri Afanas'ev, Marc Aoulaiche, Sven Van Elshocht, Ben Kaczer, Sergiu Clima, H. Hody, Malgorzata Jurczak
Publikováno v:
IEEE Electron Device Letters. 35:753-755
Leakage currents as low as \(10^{\mathrm {\mathbf {-7}}}\) A/cm \(^{\mathrm {\mathbf {2}}}\) at both 1 V and −1 V top electrode bias in the sub-0.4-nm equivalent SiO 2 thickness range are demonstrated in Ru/SrTiO x /Ru metal-insulator–metal capac
Autor:
Mohammed Zahid, Wan-Chih Wang, Valery V. Afanas'ev, Robin Degraeve, Bogdan Govoreanu, Daniel Ruiz Aguado, Jan Van Houdt, Maria Toledano-Luque
Publikováno v:
IEEE Transactions on Electron Devices. 57:2907-2916
The operation and reliability of nonvolatile memory concepts based on charge storage in nitride layers, such as TANOS (TaN/Al2O3/Si3N4/ SiO2/Si), require detailed information on the energy and spatial distribution of the charge defects in both the ni