Zobrazeno 1 - 10
of 274
pro vyhledávání: '"Wan, C. H."'
Autor:
Li, X. H., Zhao, M. K., Zhang, R., Wan, C. H., Wang, Y. Z., Luo, X. M., Liu, S. Q., Xia, J. H., Yu, G. Q., Han, X. F.
Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier magnetic t
Externí odkaz:
http://arxiv.org/abs/2306.02780
Autor:
Shao, M. H., Liu, H. F., He, R., Li, X. M., Wu, L., Ma, J., Hu, X. C., Zhao, R. T., Zhong, Z. C., Yu, Y., Wan, C. H., Yang, Y., Nan, C. -W., Bai, X. D., Ren, T. -L., Wang, X. Renshaw
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation of the meta
Externí odkaz:
http://arxiv.org/abs/2106.10837
Autor:
Wan, C. H., Stebliy, M. E., Wang, X., Yu, G. Q., Han, X. F., Kolesnikov, A. G., Bazrov, M. A., Letushev, M. E., Ognev, A. V., Samardak, A. S.
Continuous switching driven by spin-orbit torque (SOT) is preferred to realize neuromorphic computing in a spintronic manner. Here we have applied focused ion beam (FIB) to selectively illuminate patterned regions in a Pt/Co/MgO strip with perpendicu
Externí odkaz:
http://arxiv.org/abs/2011.03956
Autor:
Zhang, R. Q., Liao, L. Y., Chen, X. Z., Xu, T., Cai, L., Guo, M. H., Bai, Hao, Sun, L., Xue, F. H., Su, J., Wang, X., Wan, C. H., Bai, Hua, Song, Y. X., Chen, R. Y., Chen, N., Jiang, W. J., Kou, X. F., Cai, J. W., Wu, H. Q., Pan, F., Song, C.
We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almo
Externí odkaz:
http://arxiv.org/abs/2006.10319
Akademický článek
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Akademický článek
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Autor:
Guo, C. Y., Wan, C. H., Wang, X., Fang, C., Tang, P., Kong, W. J., Zhao, M. K., Jiang, L. N., Tao, B. S., Yu, G. Q., Han, X. F.
As an alternative angular momentum carrier, magnons or spin waves can be utilized to encode information and breed magnon-based circuits with ultralow power consumption and non-Boolean data processing capability. In order to construct such a circuit,
Externí odkaz:
http://arxiv.org/abs/1810.00380
Autor:
Wu, H., Huang, L., Fang, C., Yang, B. S., Wan, C. H., Yu, G. Q., Feng, J. F., Wei, H. X., Han, X. F.
The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report th
Externí odkaz:
http://arxiv.org/abs/1801.06617
Autor:
Fang, C., Wan, C. H., Liu, X. M., Yang, B. S., Qin, J. Y., Tao, B. S., Wu, H., Zhang, X., Jin, Z. M., Hoffmann, A., Han, X. F.
Publikováno v:
Phys. Rev. B 96, 134421 (2017)
In tunnel junctions between ferromagnets and heavy elements with strong spin orbit coupling the magnetoresistance is often dominated by tunneling anisotropic magnetoresistance (TAMR). This makes conventional DC spin injection techniques impractical f
Externí odkaz:
http://arxiv.org/abs/1705.03149
Autor:
Shi, G. Y., Wan, C. H., Chang, Y. S., Li, F., Zhou, X. J., Zhang, P. X., Cai, J. W., Han, X. F., Pan, F., Song, C.
Publikováno v:
Phys. Rev. B 95, 104435 (2017)
Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the so-called
Externí odkaz:
http://arxiv.org/abs/1702.05331