Zobrazeno 1 - 10
of 1 455
pro vyhledávání: '"Walukiewicz W"'
Publikováno v:
Journal of Applied Physics; 1/28/2024, Vol. 135 Issue 4, p1-11, 11p
Autor:
Walukiewicz, W., Rey-Stolle, I., Han, G., Jaquez, M., Broberg, D., Xie, W., Sherburne, M, Mathews, N., Asta, M. D.
The past few years have witnessed unprecedented rapid improvement of the performance of a new class of photovoltaics based on halide perovskites. This progress has been achieved even though there is no generally accepted mechanism of the operation of
Externí odkaz:
http://arxiv.org/abs/1805.04977
Autor:
Heyman, J. N., Weiss, E. M., Rollag, J. R., Yu, K. M., Dubon, O. D., Kuang, Y. J., Tu, C. W., Walukiewicz, W.
THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in
Externí odkaz:
http://arxiv.org/abs/1805.04043
Autor:
Heyman, J. N., Schwartzberg, A. M., Yu, K. M., Luce, A. V., Dubon, O. D., Kuang, Y. J., Tu, C. W., Walukiewicz, W.
Publikováno v:
Phys. Rev. Applied 7, 014016 (2017)
We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a function of time
Externí odkaz:
http://arxiv.org/abs/1608.05375
Publikováno v:
In Journal of Alloys and Compounds 5 May 2020 822
Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic sem
Externí odkaz:
http://arxiv.org/abs/1211.4051
Autor:
Dobrowolska, M., Tivakornsasithorn, K., Liu, X., Furdyna, J. K., Berciu, M., Yu, K. M., Walukiewicz, W.
The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bea
Externí odkaz:
http://arxiv.org/abs/1203.1852
Autor:
Stone, P. R., Alberi, K., Tardif, S. K. Z., Beeman, J. W., Yu, K. M., Walukiewicz, W., Dubon, O. D.
Publikováno v:
Phys. Rev. Lett. 101, 087203 (2008)
We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the r
Externí odkaz:
http://arxiv.org/abs/0807.3722
Autor:
Li, S. X., Haller, E. E., Yu, K. M., Walukiewicz, W., Ager III, J. W., Wu, J., Shan, W., Lu, Hai, Schaff, William J.
The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.3
Externí odkaz:
http://arxiv.org/abs/cond-mat/0508140
Autor:
Alberi, K., Minor, A., Scarpulla, M. A., Chung, S. J., Mars, D. E., Yu, K. M., Walukiewicz, W., Dubon, O. D.
A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization thr
Externí odkaz:
http://arxiv.org/abs/cond-mat/0408046