Zobrazeno 1 - 10
of 167
pro vyhledávání: '"Waltl, Michael"'
Autor:
Feil, Maximilian W., Weger, Magdalena, Reisinger, Hans, Aichinger, Thomas, Kabakow, André, Waldhör, Dominic, Jakowetz, Andreas C., Prigann, Sven, Pobegen, Gregor, Gustin, Wolfgang, Waltl, Michael, Bockstedte, Michel, Grasser, Tibor
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted recombinati
Externí odkaz:
http://arxiv.org/abs/2404.13463
Autor:
Illarionov, Yury Yu., Knobloch, Theresia, Uzlu, Burkay, Banshikov, Alexander G., Ivanov, Iliya A., Sverdlov, Viktor, Vexler, Mikhail I., Waltl, Michael, Wang, Zhenxing, Manna, Bibhas, Neumaier, Daniel, Lemme, Max C., Sokolov, Nikolai S., Grasser, Tibor
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators
Externí odkaz:
http://arxiv.org/abs/2309.11233
Autor:
Waldhoer, Dominic, Schleich, Christian, Michl, Jakob, Grill, Alexander, Claes, Dieter, Karl, Alexander, Knobloch, Theresia, Rzepa, Gerhard, Franco, Jacopo, Kaczer, Ben, Waltl, Michael, Grasser, Tibor
Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT). In this wo
Externí odkaz:
http://arxiv.org/abs/2212.11547
Autor:
Knobloch, Theresia, Uzlu, Burkay, Illarionov, Yury Yu., Wang, Zhenxing, Otto, Martin, Filipovic, Lado, Waltl, Michael, Neumaier, Daniel, Lemme, Max C., Grasser, Tibor
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the interaction
Externí odkaz:
http://arxiv.org/abs/2104.08172
Autor:
Knobloch, Theresia, Illarionov, Yury Yu., Ducry, Fabian, Schleich, Christian, Wachter, Stefan, Müller, Thomas, Waltl, Michael, Lanza, Mario, Vexler, Mikhail I., Luisier, Mathieu, Grasser, Tibor
Publikováno v:
Nat. Electron. 4 (2021) 98-108
Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfied by
Externí odkaz:
http://arxiv.org/abs/2008.04144
Autor:
Waldhoer, Dominic, Schleich, Christian, Michl, Jakob, Grill, Alexander, Claes, Dieter, Karl, Alexander, Knobloch, Theresia, Rzepa, Gerhard, Franco, Jacopo, Kaczer, Ben, Waltl, Michael, Grasser, Tibor
Publikováno v:
In Microelectronics Reliability July 2023 146
Autor:
Illarionov, Yury Yu., Banshchikov, Alexander G., Polyushkin, Dmitry K., Wachter, Stefan, Knobloch, Theresia, Thesberg, Mischa, Stoeger-Pollach, Michael, Steiger-Thirsfeld, Andreas, Vexler, Mikhail I., Waltl, Michael, Sokolov, Nikolai S., Mueller, Thomas, Grasser, Tibor
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are scalable
Externí odkaz:
http://arxiv.org/abs/1901.10980
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