Zobrazeno 1 - 10
of 142
pro vyhledávání: '"Walther Fuhs"'
Autor:
Walther Fuhs
Publikováno v:
Journal of Non-Crystalline Solids. 354:2067-2078
Electrical transport and recombination mechanisms in hydrogenated amorphous silicon, a-Si:H, are determined by localized band-tail states and deep defects. At low temperatures (T< 100 K) the photoluminescence originates from tunneling recombination b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35949dfde95cd0889ea1f12b28a5d317
https://doi.org/10.1016/j.jnoncrysol.2007.09.008
https://doi.org/10.1016/j.jnoncrysol.2007.09.008
Autor:
E. Conrad, K. Petter, B. Rau, Jens Schneider, Klaus Lips, Stefan Gall, Michael Stöger-Pollach, M. Muske, Walther Fuhs, J. Klein, Peter Schattschneider, I. Sieber, K. Hübener
Publikováno v:
Thin Solid Films. :7-14
Large-grained polycrystalline silicon (poly-Si) films were prepared on glass using the 'seed layer concept' which is based on the epitaxial thickening of large-grained seed layers. The aluminium-induced layer exchange (ALILE) process was used to form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17b8df0ee79d1c42a372b4f1fe296baa
https://doi.org/10.1016/j.tsf.2005.12.067
https://doi.org/10.1016/j.tsf.2005.12.067
Publikováno v:
Journal of Non-Crystalline Solids. 352:980-983
In this work, Si grain nucleation during the aluminium-induced layer-exchange (ALILE) process is studied theoretically. A combined kinetic and thermodynamic model is derived to describe the nucleation and initial growth of Si grains. In the framework
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1869b212f88bd2b6c8a62e4c1cb649f
https://doi.org/10.1016/j.jnoncrysol.2005.12.048
https://doi.org/10.1016/j.jnoncrysol.2005.12.048
Autor:
O.B. Gusev, Gerhard Weiser, R. Stangl, Walther Fuhs, S. Kazitsyna-Baranovski, E.I. Terukov, K.v. Maydell, A. Laades
Publikováno v:
Journal of Non-Crystalline Solids. 352:1884-1887
Heterojunction solar cells with thin emitter layers of a-Si:H(n + ) on monocrystalline p-type silicon exhibit electroluminescence with power efficiencies of up to 0.3%. Above 50 K the emission is intrinsic with no differences between various samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ea007bfaa264f159ab23b85859fd89e
https://doi.org/10.1016/j.jnoncrysol.2005.10.051
https://doi.org/10.1016/j.jnoncrysol.2005.10.051
Publikováno v:
Journal of Non-Crystalline Solids. 352:972-975
The formation of polycrystalline silicon (poly-Si) films by Al-induced crystallization (ALILE process) was studied in situ by optical microscopy. The characteristic feature of this process is that nucleation is strongly suppressed after an initial nu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a258523198e9be6e793132a15dc40f5f
https://doi.org/10.1016/j.jnoncrysol.2005.09.036
https://doi.org/10.1016/j.jnoncrysol.2005.09.036
Autor:
B. Rau, K. Petter, Klaus Lips, Stefan Gall, P. Schubert-Bischoff, Walther Fuhs, I. Sieber, Peter Schattschneider, D. Eyidi, A.T. Tham, Michael Stöger-Pollach
Publikováno v:
Physica B: Condensed Matter. :117-121
We present an investigation of line defects in epitaxially grown silicon layers using Secco defect etching and transmission electron microscopy (TEM). 1 μ m thick layers were deposited onto Si (1 0 0) wafers at a substrate temperature of 560 ∘ C u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1469d8941874629f632fa6d0ad9ce029
https://doi.org/10.1016/j.physb.2005.12.032
https://doi.org/10.1016/j.physb.2005.12.032
Autor:
D. Eyidi, Stefan Gall, K. Petter, Walther Fuhs, Peter Schattschneider, I. Sieber, Klaus Lips, Michael Stöger-Pollach, B. Rau
Publikováno v:
Journal of Crystal Growth. 287:433-437
Si films grown epitaxially by low-temperature electron–cyclotron resonance chemical-vapor deposition (ECRCVD) were investigated by analyzing extended defects in these films. Extended defects were made visible by Secco etching and scanning (SEM) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac83ab69ab92643ce4f9e0e6829aada2
https://doi.org/10.1016/j.jcrysgro.2005.11.059
https://doi.org/10.1016/j.jcrysgro.2005.11.059
Autor:
H.S. Reehal, Stefan Gall, I. Sieber, J. Klein, Jens Schneider, T. Quinn, Walther Fuhs, M. Muske, Andrey Sarikov
Publikováno v:
Journal of Crystal Growth. 287:423-427
In the aluminum-induced layer exchange process polycrystalline silicon thin films can be formed on foreign substrates at low temperatures. These films exhibit a preferential (1 0 0) crystal orientation, that depends on the annealing temperature. Furt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cada3e0e0cdba0383af218638d0132c
https://doi.org/10.1016/j.jcrysgro.2005.11.057
https://doi.org/10.1016/j.jcrysgro.2005.11.057
Publikováno v:
Thin Solid Films. 487:93-96
The electronic transport in P-doped laser-crystallized polycrystalline silicon was investigated using Hall-effect and electron spin resonance measurements. With increasing temperature and increasing electron concentration the Hall-mobility increases
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::802781a12bd227e905e5fecd902fe0b8
https://doi.org/10.1016/j.tsf.2005.01.043
https://doi.org/10.1016/j.tsf.2005.01.043
Publikováno v:
Thin Solid Films. 487:107-112
Annealing of amorphous silicon/aluminum layer stacks below the eutectic temperature leads to a layer exchange and concurrent crystallization of silicon. The resulting polycrystalline silicon layers are of great interest for large area thin film devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8329b69303ec33f2d1cbe2501d8fe7
https://doi.org/10.1016/j.tsf.2005.01.046
https://doi.org/10.1016/j.tsf.2005.01.046