Electron Suppression Experiments in a Small Multicusp H{sup -} Source

Autor: Leung, K.N., Hauck, C.A., Kunkel, W.B., Walther, S.R.

Publikováno v: Leung, K.N.; Hauck, C.A.; Kunkel, W.B.; & Walther, S.R.(2017). Electron Suppression Experiments in a Small Multicusp H{sup-} Source. Review of scientific instruments, 61(3). Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/29h8h80z

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::cab0766e03c828b88b2a12908499af8a
http://www.escholarship.org/uc/item/29h8h80z

Shallow junction technology for advanced CMOS devices - transitioning to plasma doping from beamline implantation.

Autor: Walther, S.R., Variam, N., Norasethekul, S., Weeman, J., Mehta, S.

Publikováno v: Proceedings of the 14th International Conference on Ion Implantation Technology, 2002; 2002, p103-106, 4p

Plasma doping system for 200 and 300 mm wafers.

Autor: Liebert, R.B., Walther, S.R., Felch, S.B., Ziwei Fang, Pedersen, B.O., Hacker, D.

Publikováno v: 2000 International Conference on Ion Implantation Technology Proceedings Ion Implantation Technology - 2000 (Cat. No.00EX432); 2000, p472-475, 4p

Enhanced Bernas ion source for the Varian EHP-500 medium-current ion implanter.

Autor: Swenson, D.R., Renau, A., Walther, S.R., Mack, M.E.

Publikováno v: Proceedings of 11th International Conference on Ion Implantation Technology; 1996, p283-286, 4p

Particle transport reduction in a serial high current implanter.

Autor: Walther, S.R., Sieradzki, M., White, N.R.

Publikováno v: Proceedings of 11th International Conference on Ion Implantation Technology; 1996, p170-173, 4p