Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Walter Yao"'
Publikováno v:
IEEE Transactions on Electron Devices. 63:755-759
This paper proposes a methodology to determine a realistic time-dependent dielectric breakdown failure rate. The in-die constant voltage stress was performed to determine the chip level Weibull shape ( $\beta _{\mathrm{die}})$ and voltage acceleratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bc19f4e586b2e500d9d3a84f54cdd17
https://doi.org/10.1109/ted.2015.2508155
https://doi.org/10.1109/ted.2015.2508155
Autor:
YH James Lim, Ee Jan Khor, Chai Wah Ng, Ramasamy Chockalingam, Aniketha Udupa Kuppar, Xu Zeng, Juan Boon Tan, H. Walter Yao
Publikováno v:
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Stress Induced Voiding of a nose type Single Via is studied. Typical nose type single via stress voiding structure has top and bottom wide metal plates originating from the pads and tapering to a narrow metal line connected by single via enabling the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b150365d3b9587593b0349929faa01d
https://doi.org/10.1109/ipfa.2018.8452516
https://doi.org/10.1109/ipfa.2018.8452516
Autor:
Manjunatha Prabhu, C.S. Premachandran, Daniel Smith, Rakesh Ranjan, S. Cimino, Zhuo-Jie George Wu, Linjun Cao, Patrick Justison, Walter Yao, Sean Ogdan, Luke England, Sukesh Kannan
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
The impact of wafer level reliability of TSV has been studied with respect to FEOL (Front End of Line) and BEOL (Back End of Line) reliability. A TSV keep out zone (KOZ) study has been done with varying gate length and width of transistor. Gate volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::283bd355708559543b68c29509c6595a
https://doi.org/10.1109/edtm.2018.8421432
https://doi.org/10.1109/edtm.2018.8421432
Autor:
Walter Yao, H., Yiang, Kok-Yong, Justison, Patrick, Rayasam, Mahidhar, Aubel, Oliver, Poppe, Jens
Publikováno v:
Journal of Applied Physics; Oct2011, Vol. 110 Issue 7, p073504, 5p
Publikováno v:
IRPS
Dielectric thickness impact on Time Dependent Dielectric Breakdown (TDDB) of Ultra-Low-κ (ULK) (κ=2.7) and porous ULK SiCOH (κ=2.55) was systematically investigated using Constant Current Stress (CCS) method on our 64nm pitch double patterned meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3769c5a9aafc8ac52e0390603d216dd9
https://doi.org/10.1109/irps.2015.7112698
https://doi.org/10.1109/irps.2015.7112698
Autor:
Brian Holt, Tian Shen, Kong Boon Yeap, Arfa Gondal, Patrick Justison, Galor Wenyi Zhang, Walter Yao, Sing Fui Yap, San Leong Liew, Seungman Choi
Publikováno v:
IRPS
This study demonstrates the impact of electrode surface modulation on conduction mechanism and TDDB behavior. We found that the Schottky barrier height can be decreased by an unexpected change of the electrode surface materials, due to introduction o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45f8d208a656104124682c5a365d4ad0
https://doi.org/10.1109/irps.2015.7112668
https://doi.org/10.1109/irps.2015.7112668
Autor:
Walter Yao, Linda True
Accounting regulatory regimes play a critical role in ensuring the reliability of financial data and the credibility of a company, and ultimately in supporting the stability of an economy. For the United States, the collapse of the Enron Corporation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______645::518c9a5fcc52a6520180f85305f203e4
http://www.frbsf.org/publications/banking/asiafocus/2012/april.pdf
http://www.frbsf.org/publications/banking/asiafocus/2012/april.pdf
Autor:
Walter Yao, Nkechi Carroll
This Asia Focus report presents an overview of China’s rural banking system, historical and recent reforms, and additional areas for improvement.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______645::f453f8dcd269e8386fc5efca2c1ae09a
http://www.frbsf.org/publications/banking/asiafocus/2010/may.pdf
http://www.frbsf.org/publications/banking/asiafocus/2010/may.pdf
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
An alternative method of analyzing time-dependent dielectric breakdown (TDDB) data for low-k dielectrics is presented. The analysis shows that time to breakdown is well correlated to the Poole-Frenkel emission equation, and therefore the √E-model i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a3fa568fe6758e684a409b6529d3980
https://doi.org/10.1109/irps.2009.5173299
https://doi.org/10.1109/irps.2009.5173299
Publikováno v:
2008 International Interconnect Technology Conference.
Time-dependent dielectric breakdown (TDDB) studies on advanced Cu/low-k interconnects show that activation energy and voltage acceleration are dependent on stress voltage and temperature respectively. These dependencies can be explained by the E- and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c98a94f1789d2203ebf2216adde386d6
https://doi.org/10.1109/iitc.2008.4546957
https://doi.org/10.1109/iitc.2008.4546957