Výsledky vyhledávání - "Walter Sherwood"

Synthesis and Ceramic Conversion Reactions of 9-BBN-Modified Allylhydridopolycarbosilane: A New Single-Source Precursor to Boron-Modified Silicon Carbide

Autor: Walter Sherwood, Edward E. Remsen, Larry G. Sneddon, Alexis R. Puerta, Mark G. Bradley

Publikováno v: Chemistry of Materials. 15:478-485

The design, synthesis, and properties of a new type of poly(borocarbosilane) polymer, 9-borabicyclo[3.3.1]nonane-modified allylhydridopolycarbosilane (AHPCS−9-BBN), that has proven to be an excelle...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd9d39c0aacfe9b62f537fbfb4ba6a5e
https://doi.org/10.1021/cm020697i

Zobrazit plný text záznamu

Low Cost Process Fabricates Near Net Shape Ceramic Matrix Composites that can be Machined by Conventional Tooling to Close Tolerances

Autor: Walter Sherwood

Publikováno v: Materials Technology. 10:183-186

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::be98b6e8a5a6b1d3c5cba774a44eaebc
https://doi.org/10.1080/10667857.1995.11752624

Zobrazit plný text záznamu

Thermal Properties of Polycarbosilane Derived Porous Silicon Carbide Composites

Autor: David Stiles, Casey Voorhees, W. D. Porter, Susan Hayes, Laura Riester, Ralph B. Dinwiddie, Hsin Wang, Walter Sherwood, Edgar Lara-Curzio

Publikováno v: 27th Annual Cocoa Beach Conference on Advanced Ceramics and Composites: B: Ceramic Engineering and Science Proceedings, Volume 24, Issue 4
Scopus-Elsevier

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2f66e3f9be75bcf21cb9e9a043c4351
https://doi.org/10.1002/9780470294826.ch81

Zobrazit plný text záznamu

Thermal Chemical Vapor Deposition of Silicon Carbide Films as Protective Coatings for Microfluidic Structures

Autor: C. G. Fountzoulas, James Castracane, Susan Hayes, Ulrike Futschik, Harry Efstathiadis, Spyros Gallis, Alain E. Kaloyeros, Walter Sherwood

Publikováno v: MRS Proceedings. 742

Amorphous silicon carbide (SiC) films were deposited on silicon substrates by thermal chemical vapor deposition (TCVD) technique, at substrate temperatures ranging from 620 °C - 850 °C. A novel, single-source halide free precursor, SP-4000, belongi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1dc956cc66565ff822a9a94761ef6f09
https://doi.org/10.1557/proc-742-k2.4

Zobrazit plný text záznamu

Conference

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Vyhledávací nástroje:

Upřesnit hledání