Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Walter Riess"'
Autor:
C. Convertino, Walter Riess, Peter Müller, Thomas Morf, Cezar B. Zota, Lukas Czornomaz, Stefan Filipp
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this work, we present a sequentially 3D integrated III-V-on-CMOS RF MOSFET technology with state-of-the-art RF performance. This platform is particularly promising for cryogenic applications where cooling power and space is limited, as the III-V d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4918fbd7b24194a98a34aee4428043b2
https://doi.org/10.1109/iedm19573.2019.8993505
https://doi.org/10.1109/iedm19573.2019.8993505
Autor:
John A. Smolin, Kristan Temme, Jerry M. Chow, Abhinav Kandala, Ivano Tavernelli, Jay M. Gambetta, Lev S. Bishop, Panagiotis Kl. Barkoutsos, Walter Riess, Andreas Fuhrer, Antonio Mezzacapo, Andrew W. Cross, Gian Salis, Nikolaj Moll, Marc Ganzhorn, Daniel J. Egger, Stefan Filipp, Peter Müller
Universal fault-tolerant quantum computers will require error-free execution of long sequences of quantum gate operations, which is expected to involve millions of physical qubits. Before the full power of such machines will be available, near-term q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1c3cd12ba8959eedcd7ea95f1e17270
Autor:
Walter Riess, Kirsten E. Moselund, Heike Riel, Mikael Björk, Emanuel Lörtscher, H. Ghoneim, Siegfried Karg, Heinz Schmid
Publikováno v:
IEEE Transactions on Electron Devices. 58:2911-2916
In this paper, we demonstrate p-channel tunnel FETs based on silicon nanowires grown with an in situ p-i-n doping profile. The tunnel FETs were fabricated with three different gate dielectrics, SiO2, Al2O3, and HfO2, and show a performance enhancemen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf475a8d374e0c73a3237fb8bc4af24b
https://doi.org/10.1109/ted.2011.2159797
https://doi.org/10.1109/ted.2011.2159797
Publikováno v:
Solid-State Electronics. 54:935-941
This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4b5b9f6c2bea4ac9a2232e91d8dc728
https://doi.org/10.1016/j.sse.2010.04.037
https://doi.org/10.1016/j.sse.2010.04.037
Publikováno v:
Other Nanotechnology Publications
This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90566ec74006bb507748579f1f5df9ba
https://doi.org/10.1109/ted.2008.2008011
https://doi.org/10.1109/ted.2008.2008011
Publikováno v:
Nature Nanotechnology. 2:570-576
Bulk syntheses of colloids efficiently produce nanoparticles with unique and useful properties. Their integration onto surfaces is a prerequisite for exploiting these properties in practice. Ideally, the integration would be compatible with a variety
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34abd9a635bbc4a22391e3d93ea0779e
https://doi.org/10.1038/nnano.2007.262
https://doi.org/10.1038/nnano.2007.262
Autor:
Heike Riel, Walter Riess, Emanuel Lörtscher, Siegfried Karg, Oliver Hayden, Heinz Schmid, Mikael Björk, Ute Drechsler
Publikováno v:
Small. 3:230-234
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d41bdedf3d3a170a62e721468aff64c6
https://doi.org/10.1002/smll.200600325
https://doi.org/10.1002/smll.200600325
Publikováno v:
Journal of Turbomachinery. 126:333-338
The FVV sponsored project “Bow Blading” (cf. acknowledgments) at the Turbomachinery Laboratory of the University of Hannover addresses the effect of strongly bowed stator vanes on the flow field in a four-stage high-speed axial compressor with co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8520f7abec8c4cce5b8e73a722321d63
https://doi.org/10.1115/1.1649743
https://doi.org/10.1115/1.1649743
Publikováno v:
Journal of Applied Physics. 95:5782-5787
Ambipolar charge injection and transport are a prerequisite for a light-emitting organic fieldeffect transistor (OFET). Organic materials, however, typically show unipolar charge-carrier transport characteristics. Consequently, organic thin-film fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::371d0a9a96d4fe19b74abd7d07f46960
https://doi.org/10.1063/1.1702141
https://doi.org/10.1063/1.1702141
Publikováno v:
IBM Journal of Research and Development. 45:89-100
We present an overview of the current status of our work on scanning-tunneling-microscope-based (STM) spectroscopy and electroluminescence (EL) excitation to study the physical and electronic structure of organic materials used in organic light-emitt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe0b781c4cdb566c78d00d00b681c3d1
https://doi.org/10.1147/rd.451.0089
https://doi.org/10.1147/rd.451.0089