Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Walter R. Buchwald"'
Autor:
Walter R. Buchwald, Robert E. Peale, Perry C. Grant, Julie V. Logan, Preston T. Webster, Christian P. Morath
Publikováno v:
Applied Sciences, Vol 12, Iss 11, p 5317 (2022)
A mathematical method is presented for the extraction of defect parameters from the multiexponential decays generated during deep-level transient spectroscopy experiments. Such transient phenomenon results from the ionization of charge trapped in def
Externí odkaz:
https://doaj.org/article/676a7cbfc8a7453eb89a000bf7393e9f
Autor:
Jon Mooney, Walter R. Buchwald
Publikováno v:
Digital Holography and Three-Dimensional Imaging 2019.
A 2-D digital holographic system with field of view spectral content obtained via a dual-beam, IR frequency comb is presented. Deep learning algorithms interpret the spatial/spectral data for the rapid, label free, un-assisted identification of patho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54bc6a4701b7a73f800de8380609b0bf
https://doi.org/10.1364/dh.2019.th4a.1
https://doi.org/10.1364/dh.2019.th4a.1
Autor:
Anna M. Clausen, Deborah M. Paskiewicz, Walter R. Buchwald, Richard A. Soref, Arnold M. Kiefer, Max G. Lagally
Publikováno v:
ACS Nano. 5:1179-1189
We demonstrate the feasibility of fabricating heterojunctions of semiconductors with high mismatches in lattice constant and coefficient of thermal expansion by employing nanomembrane bonding. We investigate the structure of and electrical transport
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::920eec1a7ae3caa9a98e64e49c8e56bf
https://doi.org/10.1021/nn103149c
https://doi.org/10.1021/nn103149c
Autor:
J Kierstead, Charles L. Woods, B Krejca, S Wentzell, Bahareh Haji-saeed, Walter R. Buchwald, J. Khoury
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:138-145
In this paper, we propose a design for a widely tunable solid-state optically and electrically pumped terahertz source based on the Smith-Purcell free-electron laser. Our design consists of a thin dielectric layer sandwiched between an upper corrugat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::863a6b0c5496f57487d1d509d7c33113
https://doi.org/10.1109/jstqe.2010.2049255
https://doi.org/10.1109/jstqe.2010.2049255
Autor:
W. Streyer, Robert E. Peale, Shivashankar Vangala, Nima Nader, Joshua R. Hendrickson, Justin W. Cleary, Richard A. Soref, Ivan Avrutsky, Daniel Wasserman, Bruce Claflin, Walter R. Buchwald
Publikováno v:
Optics express. 23(3)
Platinum germanides (PtGe) were investigated for infrared plasmonic applications. Layers of Pt and Ge were deposited and annealed. X-ray diffraction identified PtGe(2) and Pt(2)Ge(3) phases, and x-ray photo-electron spectroscopy determined vertical a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cade695490a57e5f9cef202167f35977
https://pubmed.ncbi.nlm.nih.gov/25836190
https://pubmed.ncbi.nlm.nih.gov/25836190
Publikováno v:
Journal of Optics A: Pure and Applied Optics. 8:840-848
We propose that the operational wavelength of waveguided Si-based photonic integrated circuits and optoelectronic integrated circuits can be extended beyond the 1.55 µ mt elecom range into the wide infrared from 1.55 to 100 µm. The Si rib-membrane
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6011b54778a38ad0eff433d696233fd
https://doi.org/10.1088/1464-4258/8/10/004
https://doi.org/10.1088/1464-4258/8/10/004
Autor:
Helen M. Dauplaise, Walter R. Buchwald, Kenneth Vaccaro, W. A. Teynor, C.P. Morath, A. Davis, M. Roland, William R. Clark
Publikováno v:
Journal of Electronic Materials. 34:1368-1372
A cadmium sulfide (CdS) passivation process was demonstrated for the first time on InGaAs/InP p-i-n mesa photodetectors. The passivated devices produced lower reverse bias leakage currents in comparison to devices that received only a thermally depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d74dc413801ed89a84b1466340235e5b
https://doi.org/10.1007/s11664-005-0192-4
https://doi.org/10.1007/s11664-005-0192-4
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 54:2020-2026
III-V single photon avalanche diode (SPAD) sensitivity at wavelengths > 1 /spl mu/m typically comes at the expense of higher dark-count rates and afterpulsing compared to silicon SPADs. Regarding the measurement of dark-count rates, conventional coun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d5968da82a695d28c3715a7eb971460
https://doi.org/10.1109/tim.2005.853347
https://doi.org/10.1109/tim.2005.853347
Autor:
J.W. Burger, Michael C. Skipper, Walter R. Buchwald, Michael D. Abdalla, J. S. Tyo, J. S. H. Schoenberg
Publikováno v:
IEEE Transactions on Plasma Science. 25:327-334
An ultrawide-band (UWB) pulse generator based on high-gain (lock-on mode) gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) is presented. Revised PCSS contact design shows improved performance in hold-off field, on-state switch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1ec4a86c9ee27d0ad29cd56189eadf8
https://doi.org/10.1109/27.602507
https://doi.org/10.1109/27.602507