Zobrazeno 1 - 10
of 204
pro vyhledávání: '"Walter A, Harrison"'
Publikováno v:
Materials Science in Semiconductor Processing. 161:107404
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ba72305b6ce1b92cd8cc2d232b6429a
https://doi.org/10.1016/j.mssp.2023.107404
https://doi.org/10.1016/j.mssp.2023.107404
Autor:
Walter A Harrison
Writing a memoir was not only an interesting experience for this Professor of Applied Physics at Stanford University, but it also provided him an opportunity to revisit his past with his sons. The author graduated from Cornell in 1953 in Engineering
Autor:
Walter A. Harrison
Publikováno v:
Physics in Perspective. 11:198-208
The energy bands of semiconductors were known only qualitatively at the time of the invention of the transistor in 1947. The real bands became known only in 1954 when Frank Herman used a combination of experimental information and W. Conyers Herring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8878dc26e6edf73cf0365718fdb50c4b
https://doi.org/10.1007/s00016-008-0397-z
https://doi.org/10.1007/s00016-008-0397-z
Publikováno v:
Journal of Non-Crystalline Solids. :574-578
Tight binding calculations of the electric field gradients at As sites in crystalline arsenic and arsenic chalcogenides are in reasonable agreement with experimental values obtained from nuclear quadrupole resonance (NQR) and nuclear magnetic resonan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fd3281f626c5b935be25fa47e36ef3f
https://doi.org/10.1016/j.jnoncrysol.2004.03.045
https://doi.org/10.1016/j.jnoncrysol.2004.03.045
Autor:
Walter A. Harrison
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 25:553-555
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7070356dfdd0f67626864e9363781c2
https://doi.org/10.1007/s10948-012-1463-y
https://doi.org/10.1007/s10948-012-1463-y
Autor:
Walter A. Harrison
Publikováno v:
Solid State Communications. 124:443-447
In the context of computational physics other methods are more accurate, but tight-binding theory allows very direct physical interpretation and is simple enough to allow much more realistic treatments beyond the local density approximation. We addre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6793db222439062763ef52158a20d555
https://doi.org/10.1016/s0038-1098(02)00549-5
https://doi.org/10.1016/s0038-1098(02)00549-5
Autor:
Walter A. Harrison
Publikováno v:
Philosophical Magazine B. 82:1755-1766
We study the energy gained for simple crystal structures by occupying the lower portion of tight-binding bands arising from one shell of atomic orbitals. We see that a Friedel model, based upon a rectangular density of states and the second moment of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0abe7775749aec29c2ca9d83b880b5ae
https://doi.org/10.1080/13642810208222937
https://doi.org/10.1080/13642810208222937
Publikováno v:
Journal of Applied Physics. 92:4431-4440
We use tight-binding theory to investigate the electronic contribution to dielectric susceptibility in thin films and interfaces of covalent materials. We begin by describing the effects of an electric field on the elemental unit of a covalent materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e285e330fc26655c1281fceac3abe0
https://doi.org/10.1063/1.1507812
https://doi.org/10.1063/1.1507812
Publikováno v:
Journal of Applied Physics. 90:4570-4577
We present a tight-binding model of Zr silicate in the limit that every Zr and Si atom is bonded to four O atoms. We view the material as being composed of small, relatively uncoupled collections of atoms, called bonding units, with stoichiometries S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84d62ceb21bff9c019b869d14be5a9e4
https://doi.org/10.1063/1.1406972
https://doi.org/10.1063/1.1406972