Výsledky vyhledávání - "Wally Czubatyj"

Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits

Autor: Stephen J. Hudgens, Wally Czubatyj

Publikováno v: Electronic Materials Letters. 8:157-167

The high current switching characteristics of the thin-film Ovonic Threshold Switch (OTS) offer unique advantages in modern applications. This paper covers the current theoretical understanding of the OTS switching process and highlights relevant mat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a40a495085eebf3442bf9ba46ca2db2
https://doi.org/10.1007/s13391-012-2040-z

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Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention

Autor: Charles H. Dennison, Tyler Lowrey, Wally Czubatyj, Stephen J. Hudgens, Carl Schell

Publikováno v: IEEE Electron Device Letters. 31:869-871

Phase-change memory alloys based on germanium, antimony, and tellurium with SiO2 nanophase dielectric inclusions are investigated for material and electrical properties. The new alloys are prepared by cosputtering with a SiO2 target creating nanophas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6cd3034bee85242f62d427f810b56beb
https://doi.org/10.1109/led.2010.2051135

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Conformal MOCVD Deposition of GeSbTe in High Aspect Ratio Via Structure for Phase Change Memory Applications

Autor: Weimin Li, Jim Ricker, Tyler Lowrey, J. Reed, Chuck Dennison, Regino Sandoval, Jeff Roeder, Jeffery Fournier, Chongying Xu, Guy C. Wicker, Wally Czubatyj, Carl Schell, Stephen J. Hudgens, William Hunks, Phil Chen, Jun-Fei Zheng, Smuruthi Kamepalli, Matthias Stender

Publikováno v: MRS Proceedings. 1160

We have demonstrated conformal deposition of amorphous GeSbTe films in high aspect ratio structures by MOCVD. SEM analysis showed the as-deposited GeSbTe films had smooth morphologies and were well controlled for void free amorphous conformal deposit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::324f69b10eb11a49f55d1e3ecfd59c1a
https://doi.org/10.1557/proc-1160-h14-11

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Advances in ALD GST Process and Equipment for sub-20nm PCRAM Devices : Precursor delivery, GST Gapfill and Electrical Characterization

Autor: Zia Karim, Lin Yang, Jerry Mack, Ming Liu, Ulrich Weber, Peter Baumann, Sasangan Ramanathan, Brian Lu, Wally Czubatyj, Stephen Hudgens, Tyler Lowrey

Publikováno v: ECS Meeting Abstracts. :2808-2808

not Available.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2da7fe81c237d675680a4f77031da057
https://doi.org/10.1149/ma2012-02/37/2808

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