Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Wally Czubatyj"'
Autor:
Stephen J. Hudgens, Wally Czubatyj
Publikováno v:
Electronic Materials Letters. 8:157-167
The high current switching characteristics of the thin-film Ovonic Threshold Switch (OTS) offer unique advantages in modern applications. This paper covers the current theoretical understanding of the OTS switching process and highlights relevant mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a40a495085eebf3442bf9ba46ca2db2
https://doi.org/10.1007/s13391-012-2040-z
https://doi.org/10.1007/s13391-012-2040-z
Publikováno v:
IEEE Electron Device Letters. 31:869-871
Phase-change memory alloys based on germanium, antimony, and tellurium with SiO2 nanophase dielectric inclusions are investigated for material and electrical properties. The new alloys are prepared by cosputtering with a SiO2 target creating nanophas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cd3034bee85242f62d427f810b56beb
https://doi.org/10.1109/led.2010.2051135
https://doi.org/10.1109/led.2010.2051135
Autor:
Weimin Li, Jim Ricker, Tyler Lowrey, J. Reed, Chuck Dennison, Regino Sandoval, Jeff Roeder, Jeffery Fournier, Chongying Xu, Guy C. Wicker, Wally Czubatyj, Carl Schell, Stephen J. Hudgens, William Hunks, Phil Chen, Jun-Fei Zheng, Smuruthi Kamepalli, Matthias Stender
Publikováno v:
MRS Proceedings. 1160
We have demonstrated conformal deposition of amorphous GeSbTe films in high aspect ratio structures by MOCVD. SEM analysis showed the as-deposited GeSbTe films had smooth morphologies and were well controlled for void free amorphous conformal deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::324f69b10eb11a49f55d1e3ecfd59c1a
https://doi.org/10.1557/proc-1160-h14-11
https://doi.org/10.1557/proc-1160-h14-11
Autor:
Stephen J. Hudgens, Sergey A. Kostylev, Tyler Lowrey, Charles H. Dennison, Guy C. Wicker, Wally Czubatyj
Publikováno v:
MRS Proceedings. 803
Phase change memory devices were originally reported by S. R. Ovshinsky [1] in 1968. A 256-bit phase-change memory array based on chalcogenide materials was reported in 1970 [2], Recent advances in phase change materials, memory device designs, and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2135c86e00759a72bb7cb8267ba49a3a
https://doi.org/10.1557/proc-803-hh2.1
https://doi.org/10.1557/proc-803-hh2.1
Autor:
Zia Karim, Lin Yang, Jerry Mack, Ming Liu, Ulrich Weber, Peter Baumann, Sasangan Ramanathan, Brian Lu, Wally Czubatyj, Stephen Hudgens, Tyler Lowrey
Publikováno v:
ECS Meeting Abstracts. :2808-2808
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2da7fe81c237d675680a4f77031da057
https://doi.org/10.1149/ma2012-02/37/2808
https://doi.org/10.1149/ma2012-02/37/2808