Zobrazeno 1 - 10
of 176
pro vyhledávání: '"Wallow, Thomas I."'
Autor:
Jimmy Fan, Fahong Li, Jen-Shiang Wang, Maxence Delorme, Vivek Kumar Jain, Jiao Liang, Wallow Thomas I, Rui Yuan, Jiyou Fu, ChangAn Wang
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
Driving down imaging-induced edge placement error (EPE) is a key enabler of semiconductor technology node scaling1-3. From the 5 nm node forward, stochastic edge placement error (SEPE) is predicted to become the biggest contributor to total edge plac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bf15b26f6768fac743b27882483537c
https://doi.org/10.1117/12.2601587
https://doi.org/10.1117/12.2601587
Autor:
Markus P. Benk, Ken Goldberg, Obert Wood, Jeremy McCord, Bryan S. Kasprowicz, Henry Kamberian, Pawitter Mangat, Wallow Thomas I, Yulu Chen
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2017.
This paper provides experimental measurements of through-focus pattern shifts between contact holes in a dense array and a surrounding pattern of lines and spaces using the SHARP actinic microscope in Berkeley. Experimental values for pattern shift i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a59f23bd10a67bc5229ebdecd5c6a4ba
https://doi.org/10.1117/12.2280371
https://doi.org/10.1117/12.2280371
Autor:
Anita Fumar-Pici, Jun Chen, David Rio, Chen Zhang, Wallow Thomas I, Bart Laenens, Werner Gillijns, Patrick Jaenen, Harm Dillen, Peng-cheng Yang, Jing Wang, Jeroen Van de Kerkhove, Sergey A. Babin, Chris Spence, Frieda Van Roey, Paul van Adrichem
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXI.
In the course of assessing OPC compact modeling capabilities and future requirements, we chose to investigate the interface between CD-SEM metrology methods and OPC modeling in some detail. Two linked observations motivated our study: 1) OPC modeling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1570a0d15f1c323440e7305872a3893b
https://doi.org/10.1117/12.2260443
https://doi.org/10.1117/12.2260443
Publikováno v:
SPIE Proceedings.
Given the potential impact of distortions within the Field Of View (FOV) of the SEM, we need a method to quantify and describe them. We will show a method to find the magnitude and directions of the distortions. This description will enable assessmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c5b4e36901ad4c8cf1daf02e5382fbd
https://doi.org/10.1117/12.2260664
https://doi.org/10.1117/12.2260664
Autor:
Peter De Schepper, David Rio, Werner Gillijns, Joost Bekaert, Michael Greer, Michael Kocsis, Maxence Delorme, Anita Fumar-Pici, Adam Lyons, Sook Lee, Danilo De Simone, Wallow Thomas I, Jason K. Stowers
Publikováno v:
SPIE Proceedings.
Inpria has developed a directly patternable metal oxide hard-mask as a high-resolution photoresist for EUV lithography1. In this contribution, we describe a Tachyon 2D OPC full-chip model for an Inpria resist as applied to an N7 BEOL block mask appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abfe7d0d31cf455f625268c413e5f9a4
https://doi.org/10.1117/12.2260441
https://doi.org/10.1117/12.2260441
Autor:
Fan Yongfa, Maggie Ma, Yen-Wen Lu, Zhang Qiang, Gary Zhang, Xin Guo, Mu Feng, Ronald Goossens, Peng Liu, Zheng Leiwu, Wallow Thomas I, Qian Zhao, Keith Gronlund
Publikováno v:
SPIE Proceedings.
Strong resist shrinkage effects have been widely observed in resist profiles after negative tone development (NTD) and therefore must be taken into account in computational lithography applications. However, existing lithography simulation tools, esp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce40a5afd94c366216802266deefbea4
https://doi.org/10.1117/12.2239243
https://doi.org/10.1117/12.2239243
Autor:
Sanchez, Martha I., Ukraintsev, Vladimir A., Wallow, Thomas I., Zhang, Chen, Fumar-Pici, Anita, Chen, Jun, Laenens, Bart, Spence, Christopher A., Rio, David, van Adrichem, Paul, Dillen, Harm, Wang, Jing, Yang, Peng-Cheng, Gillijns, Werner, Jaenen, Patrick, van Roey, Frieda, van de Kerkhove, Jeroen, Babin, Sergey
Publikováno v:
Proceedings of SPIE; March 2017, Vol. 10145 Issue: 1 p101451Q-101451Q-1, 913061p
Autor:
Wallow, Thomas I., Dai, Junyan, Szmanda, Charles R., Cervera, Hiram, Truong, Chi, Bekiaris, Nikolaos, Kye, Jong-Wook, Kim, Ryoung-Han, Levinson, Harry J., Mori, Glen
Publikováno v:
Proceedings of SPIE; Nov2009 Part 2, Issue 1, p72730D-72730D-10, 10p
Correlation of EUV resist performance metrics in micro-exposure and full-field EUV projection tools.
Autor:
Wallow, Thomas I., Pierson, Bill, Mizuno, Hiroyuki, Fumar-Pici, Anita, Petrillo, Karen, Anderson, Chris N., Naulleau, Patrick P., Hansen, Steven G., Deng, Yunfei, van Ingen Schenau, Koen, Koay, Chiew-Seng, Ohara, Linda, Han, Sang-In, Watso, Robert, Huli, Lior, Burkhardt, Martin, Wood, Obert, Mallmann, Joerg, Kessels, Bart, Routh, Robert
Publikováno v:
Proceedings of SPIE; Nov2009 Part 2, Issue 1, p72733T-72733T-11, 11p
Correlation of experimental and simulated cure-induced photoresist distortions in double patterning.
Autor:
Wallow, Thomas I., Rayasam, Mahidhar, Yamaguchi, Masanori, Yamada, Yohei, Petrillo, Karen, Yoshimoto, Kenji, Kye, Jongwook, Kim, Ryoung-Han, Levinson, Harry J.
Publikováno v:
Proceedings of SPIE; Nov2009, Issue 1, p727309-727309-8, 8p