Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Walle, P. van der"'
Publikováno v:
Proceedings Extreme Ultraviolet (EUV) Lithography XI, SPIE Advanced Lithography Event, San Jose, CA, USA, 23 March 2020, 11323
The EUV BeamLine 2 (EBL2) is being used to expose samples to EUV radiation for optics and mask lifetime testing. Before and after exposure the samples can be analyzed in-situ by X-ray photoelectron spectroscopy (XPS). During exposure the samples can
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Autor:
Koster, N.B., Sligte, E. te, Molkenboer, F.T., Deutz, A.F., Walle, P. van der, Muilwijk, P.M., Mulckhuyse, W.F.W., Oostdijck, B.W., Hollemans, C.L., Nijland, B.A.H., Kerkhof, P.J., Putten, M. van, Westerhout, J.
Publikováno v:
Panning, E.M.Goldberg, K.A., Extreme Ultraviolet (EUV) Lithography VIII Conference, 27 February-2 March 2017, San Jose, CA, USA, 10143
TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components requiring EUV exposure. EBL2 consists of a EUV Beam Line, a XPS system, and sample handling inf
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Publikováno v:
Sanchez, M.I.Ukraintsev, V.A., 30th Conference on Metrology, Inspection, and Process Control for Microlithography 22-25 February 2016, 9778
The Rapid Nano is a particle inspection system developed by TNO for the qualification of EUV reticle handling equipment. The detection principle of this system is dark-field microscopy. The performance of the system has been improved via model-based
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Publikováno v:
Nanotechnology, 31, 1, 2225-2236
Cleanliness is a prerequisite for obtaining economically feasible yield levels in the semiconductor industry. For the next generation of lithographic equipment, EUV lithography, the size of yield-loss inducing particles for the masks will be smaller
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Autor:
Sligte, E. te, Koster, N.B., Molkenboer, F.T., Walle, P. van der, Muilwijk, P.M., Mulckhuyse, W.F.W., Oostdijck, B.W., Hollemans, C.L., Nijland, B.A.H., Kerkhof, P.J., Putten, M. van, Hoogstrate A.M., Deutz, A.F.
Publikováno v:
Kasprowicz, B.S.Buck, P.D., Photomask Technology, 12 September 2016, San José CA, USA
TNO is building EBL2: a laboratory EUV exposure system capable of operating at high broad band EUV powers and intensities, in which XPS analysis of exposed samples is possible without breaking vacuum. Its goal is to accelerate the development and tes
Externí odkaz:
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Publikováno v:
SPIE Advanced Lithography Conference, Metrology, Inspection, and Process Control for Microlithography XXVIII, 23-27 February 2014, San Jose, CA, USA, 9050
The background in simple dark field particle inspection shows a high scatter variance which cannot be distinguished from signals by small particles. According to our models, illumination from different azimuths can reduce the background variance. A m
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Autor:
Walle, P. van der, Kumar, P., Ityaksov, D., Versluis, R., Maas, D.J., Kievit, O., Janssen, J., Donck, J.C.J. van der
Publikováno v:
Abboud, F.E.Faure, T.B., Photomask Technology 2012, proceedings SPIE
TNO has developed the Rapid Nano scanner to detect nanoparticles on EUVL mask blanks. This scanner was designed to be used in particle qualifications of EUV reticle handling equipment. In this paper we present an end-to-end model of the Rapid Nano de
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Publikováno v:
International Journal of Biological Macromolecules; 1999, Vol. 25 Issue: 1 p123-128, 6p
Autor:
Walle, Jacobus van der
Publikováno v:
Moravská zemská knihovna v Brně.