Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Wallas Chen"'
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
With shrinking design rules, the latest bare wafer surface inspection tools are driving sensitivity to less than 20nm. Fabs have also improved particle control—sometimes the biggest particle size is only ∼30–50nm. KLA-Tencor's SEM Review tool u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aac1c292149ad92145f1af7744bb815
https://doi.org/10.1109/asmc.2015.7164472
https://doi.org/10.1109/asmc.2015.7164472
Autor:
David Tsui, Chris Young, C. L. Lin, Wallas Chen, Damian Chen, Ellis Chang, M. S. Liang, P. R. Jeng, Simon Jang, Henry Chen
Publikováno v:
SPIE Proceedings.
In the early development stage of 32nm processes, identifying a nd isolating systematic defects is critical to understanding the issues related to design and process interactions. Conventional inspection methodologies using random review sa mpling on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac32424ebbe73bf47647510ad3d69a90
https://doi.org/10.1117/12.804526
https://doi.org/10.1117/12.804526
Autor:
Wallas Chen, Henry Chen, Z. Y. Chen, J. H. Yang, Meng-Che Wu, Melvin Ng, Josh Chang, I. C. Chou, Mingwei Li, Cathy Perry-Sullivan
Publikováno v:
SPIE Proceedings.
This paper describes a methodology for after-develop inspection (ADI) using a broadband DUV/UV/visible brightfield inspector with a unique optical mode. The VIB (Varied Illumination Brightfield) optical mode enables capture of unique killer defects a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b52effb81393402f308dfcaca1e27c70
https://doi.org/10.1117/12.804661
https://doi.org/10.1117/12.804661