Výsledky vyhledávání - "Wall, Donald R."

Conference

Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing.

Autor: Itokawa, Hiroshi, Berliner, Nathaniel C., Teehan, Sean, Wall, Donald R., Wahl, Jeremy A., Kim, Eunha, Li, Juntao, Demarest, James J., Ronsheim, Paul, Paruchuri, Vamsi

Publikováno v: 2012 12th International Workshop on Junction Technology; 1/ 1/2012, p210-215, 6p

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Conference

Effect of Elevated Implant Temperature on Amorphization and Activation in As-implanted Silicon-on-insulator Layers.

Autor: Saenger, Katherine L., Bedell, Stephen W., Copel, Matthew, Majumdar, Amlan, Ott, John A., de Souza, Joel P., Koester, Steven J., Wall, Donald R., Sadana, Devendra K.

Publikováno v: MRS Online Proceedings Library; 2008, Vol. 1070 Issue 1, p1-6, 6p

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Akademický článek

Removal of Carbonaceous Residue with Wet Hydrogen in Greensheet Processing for Multilayer Ceramic Module: II, Reaction in Large Modules Influenced by Pore Diffusion and Mass Transfer.

Autor: Sohn, Hong Y., Wall, Donald R.

Publikováno v: Journal of the American Ceramic Society; 1990, Vol. 73 Issue 10, p2953-2961, 9p

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Akademický článek

Removal of Carbonaceous Residue with Wet Hydrogen in Greensheet Processing for Multilayer Ceramic Module: I, Residue Formation and Intrinsic Chemical Kinetics.

Autor: Wall, Donald R., Sohn, Hong Y.

Publikováno v: Journal of the American Ceramic Society; 1990, Vol. 73 Issue 10, p2944-2952, 9p

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